Monolayer TeO x thin film was deposited on K 9 glass substrates by vacuum evaporation. By adopting a specific locating method, atomic force microscope (AFM)could be used to analysis the structure of short wavelength laser static recording bits, which were recorded at different writing powers in TeO x thin film. It was found that the film had good writing sensitivity, the reflectivity contrast could reach to a high value at writing power 1.5 mW. The bits were characterized by obvious hollows and mounds. With the increase of writing power, the height of hollow and mound increased, so did the length of the recording bits. The present setup allows the correlation of the change in reflectivity contrast caused by a specific laser pulse to the bit topography. This establishes the use of the analytical power of AFM for dedicated efforts in improving the performance, e.g., signal to noise ratio and storage density of optical storage media.