• Microelectronics
  • Vol. 52, Issue 1, 150 (2022)
LIANG Runcheng, CHEN Faguo, GUO Rong, HAN Yi, LIU Zhaoxing, ZHANG Jing, and ZHAO Ri
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210234 Cite this Article
    LIANG Runcheng, CHEN Faguo, GUO Rong, HAN Yi, LIU Zhaoxing, ZHANG Jing, ZHAO Ri. Statistical Analysis of Total Ionizing Dose Effect on Flash Memory Floating Gate Cells[J]. Microelectronics, 2022, 52(1): 150 Copy Citation Text show less
    References

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    [8] BAGATIN M, GERADIN S, PACCAGNELLA A. Space and terrestrial radiation effects in flash memories [J]. Semicond Sci & Technol, 2017, 32(3): 033003.

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    [12] ZHANG G, LI Y, LIU J. Reliability analysis using GO methodology and grey system theory [J]. Appl Mech & Mater, 2012, 220: 389-394.

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    LIANG Runcheng, CHEN Faguo, GUO Rong, HAN Yi, LIU Zhaoxing, ZHANG Jing, ZHAO Ri. Statistical Analysis of Total Ionizing Dose Effect on Flash Memory Floating Gate Cells[J]. Microelectronics, 2022, 52(1): 150
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