• Journal of Semiconductors
  • Vol. 40, Issue 6, 060402 (2019)
Lun Dai
Author Affiliations
  • School of Physics, Peking University, Beijing 100871, China
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    DOI: 10.1088/1674-4926/40/6/060402 Cite this Article
    Lun Dai. Room-temperature stable two-dimensional ferroelectric materials[J]. Journal of Semiconductors, 2019, 40(6): 060402 Copy Citation Text show less
    References

    [1] T Birol. Stable and switchable polarization in 2D. Nature, 560, 174(2018).

    [2] M Hoffmann, r F P G Fengler, g M Herzig et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, 565, 464(2019).

    [3] W Ding, u J Zhu, Z Wang et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat Commun, 8, 14596(2017).

    [4] J Xiao, u H Zhu, g Y Wang et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 120, 227601(2018).

    [5] Y Zhou, D Wu, u Y Zhu et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett, 17, 5508(2017).

    [6] S Wan, i Y Li, i W Li et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale, 10, 14885(2018).

    [7] A I Khan, e K Chatterjee, N Wang et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 14, 182(2015).

    [8] M Si, u C Su, C Jiang et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat Nano, 13, 24(2018).

    Lun Dai. Room-temperature stable two-dimensional ferroelectric materials[J]. Journal of Semiconductors, 2019, 40(6): 060402
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