• Journal of Semiconductors
  • Vol. 40, Issue 6, 060402 (2019)
Lun Dai
Author Affiliations
  • School of Physics, Peking University, Beijing 100871, China
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    DOI: 10.1088/1674-4926/40/6/060402 Cite this Article
    Lun Dai. Room-temperature stable two-dimensional ferroelectric materials[J]. Journal of Semiconductors, 2019, 40(6): 060402 Copy Citation Text show less
    (Color online) Double-well landscape of the free energy F in a ferroelectric as a function of the electric polarization P. Insets: the two energetically degenerate state with opposite electric polarizations of α-In2Se3. The size-view ball-and-stick schematic illustrations are cited from Ref. [3].
    Fig. 1. (Color online) Double-well landscape of the free energy F in a ferroelectric as a function of the electric polarization P. Insets: the two energetically degenerate state with opposite electric polarizations of α-In2Se3. The size-view ball-and-stick schematic illustrations are cited from Ref. [3].
    Lun Dai. Room-temperature stable two-dimensional ferroelectric materials[J]. Journal of Semiconductors, 2019, 40(6): 060402
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