• Laser & Optoelectronics Progress
  • Vol. 52, Issue 9, 91404 (2015)
Liu Bin1、2、* and Liu Yuanyuan3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/lop52.091404 Cite this Article Set citation alerts
    Liu Bin, Liu Yuanyuan. High Power 980 nm Ridge Waveguide Semiconductor Laser Diode[J]. Laser & Optoelectronics Progress, 2015, 52(9): 91404 Copy Citation Text show less
    References

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    [2] E Desurvire. Spectral noise figure of Er3+-doped fiber amplifiers[J]. IEEE Photon Techno Lett, 1990, 2(3): 208.

    [3] M Fukuda, M Okayasu, J Temmyo, et al.. Degradation behavior of 0.98- um strained quantum well InGaas/AlGaAs lasers under high-power operation[J]. IEEE J Quantum Electron, 1994, 30(2): 471-476.

    [4] A Moser, A Oosenbrug, E E Latta, et al.. High-power operation of strained InGaAs/AlGaAs single quantum well lasers[J]. Appl Phys Lett, 1991, 59(21): 2642-2644.

    [5] M Okayasu, M fukuda, T Takeshita, et al.. Facet oxidation of InGaAs/GaAs strained quantum- well lasers[J]. J Appl Phys, 1991, 69(12): 8346-8351.

    [6] Chong Feng, Wang Jun, Xiong Cong, et al.. An asymmetric broad waveguide structure for a 0.98-mm high-conversionefficiency diode laser[J]. Journal of Semiconductors, 2009, 30(6): 64-67.

    [7] A V Syrbu, V P Yakovlev, G I Suruceanu, et al.. ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high CW power and‘wallplug’efficiency[J]. Electron Lett, 1996, 32(4): 352-353.

    [8] J E Ungau, N S K Kwong, S W Oh, et al.. High power 980 nm nonabsorbing facet lasers[J]. Electron Lett, 1994, 30: 1766-1767.

    [9] R L Thornton, R D Burnham, T L Paoli. Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering[J]. Appl Phys Lett, 1986, 48(1): 7-9.

    [10] M Sagawa, K Hiramoto, T Toyonaka, et al.. High power COD-free operation of 0.98 mm InGaAs/GaAs/InGaP lasers with non-injection regions near the facets[J]. Electron Lett, 1994, 30(17): 1410-1411.

    Liu Bin, Liu Yuanyuan. High Power 980 nm Ridge Waveguide Semiconductor Laser Diode[J]. Laser & Optoelectronics Progress, 2015, 52(9): 91404
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