Liu Bin, Liu Yuanyuan. High Power 980 nm Ridge Waveguide Semiconductor Laser Diode[J]. Laser & Optoelectronics Progress, 2015, 52(9): 91404
Copy Citation Text
The design and fabrication of high power 980 nm ridge waveguide semiconductor laser diodes are described. To reduce the optical power density on facets, the broad-waveguide structure is designed. The 500 mW kink-free laser diodes is obtained by standard ridge waveguide laser diode process techniques, and the catastrophic optical damage (COD) level of the LDs is 560 mW.