• Laser & Optoelectronics Progress
  • Vol. 59, Issue 13, 1302001 (2022)
Yanfeng Wang1 and Xiangyang Miao2、*
Author Affiliations
  • 1Department of Physics, Lvliang University, Lvliang033001, Shanxi , China
  • 2College of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, Shanxi , China
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    DOI: 10.3788/LOP202259.1302001 Cite this Article Set citation alerts
    Yanfeng Wang, Xiangyang Miao. Theoretical Study of High-Order Harmonic Generation from Acceptor-Doped Semiconductor[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1302001 Copy Citation Text show less
    One-dimensional periodic potentials and energy-band structures of undoped and acceptor-doped semiconductors. (a) One-dimensional periodic potentials; (b) energy-band structures
    Fig. 1. One-dimensional periodic potentials and energy-band structures of undoped and acceptor-doped semiconductors. (a) One-dimensional periodic potentials; (b) energy-band structures
    High-order harmonic generation (HHG) spectra with different doping rates. Dotted lines show HHG spectra with doping rate of 0 (undoped) and solid lines show HHG spectra with different doping rates. (a) Doping rate is 0.016; (b) doping rate is 0.048; (c) doping rate is 0.111; (d) doping rate is 0.143
    Fig. 2. High-order harmonic generation (HHG) spectra with different doping rates. Dotted lines show HHG spectra with doping rate of 0 (undoped) and solid lines show HHG spectra with different doping rates. (a) Doping rate is 0.016; (b) doping rate is 0.048; (c) doping rate is 0.111; (d) doping rate is 0.143
    TDPI images with different doping rates. (a) Doping rate is 0 (undoped); (b) doping rate is 0.143
    Fig. 3. TDPI images with different doping rates. (a) Doping rate is 0 (undoped); (b) doping rate is 0.143
    Yanfeng Wang, Xiangyang Miao. Theoretical Study of High-Order Harmonic Generation from Acceptor-Doped Semiconductor[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1302001
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