Author Affiliations
1Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China2Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China3Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, Chinashow less
Fig. 1. Process flowchart of MENSLL (Process A) and NSCL (Process B).
Fig. 2. (a) Simulated structure of FDTD; Electric field distributions for (b) 1200-nm-diameter nanosphere and (c) 600-nm-diameter nanosphere; Electric field distribution in XY plane for tilt exposure with the tilted angle (d) , (e) , (f) . Insets: Electric field distribution in XZ plane.
Fig. 3. Plane-view SEM images for samples after (a) twin exposures when and , 180°, (b) triple exposures when and , 120°, 240°, (c) quadruple exposures when and , 90°, 180°, 270°, (d) quintuple exposures when and , 90°, 180°, 270°, and and , (e) twin exposures when and , 90°, (f) triple exposures when and , 120°, 240°. The black scale bar is 4 μm.
Fig. 4. SEM images of (a) the nanosphere monolayer after developing, (b) the nanosphere cleared partly, and (c) close-pack nanorings. The black scale bar is 2 μm.
Fig. 5. SEM images of nanring fabricated by shrinking silica spheres for (a) 180, (b) 270, and (c) 360 s. Insets: side view images. The black scale bar is 1 μm.
Fig. 6. SEM images of nanorescents fabricated in the conditions of (a) and shrinking silica spheres for 180 s, (b) and shrinking silica spheres for 180 s, and (c) and shrinking silica spheres for 270 s. Insets: side view images. The black scale bar is 1 μm.
Fig. 7. SEM images of hierarchical multiple structures with (b) triple exposures when and 0°, 120°, 240°, (c) quadruple exposures when and 0°, 90°, 180°, 270°, (d) quintuple exposures when and , 72°, 144°, 216°, 288°. The black scale bar is 3 μm.