[1] Zhao Zisen. Past, present and future of optical fiber communications[J]. Acta Optica Sinica, 2011, 31(9): 0900109.
[2] Wang Qiming, Zhao Lingjuan, Zhu Hongliang, et al. Progress in active devices for optical fiber communication[J]. Telecommunications Science, 2016(5): 10-23.
[3] Li Hongxun, Zhang Rui. Progress of fiber amplification network and its application[J]. Laser & Optoelectronics Progress, 2017, 54(1): 010002.
[6] Bi Shuhe. Research highlight of several III-V semiconductor matericals[J]. Thermosetting Resin, 1999(4): 114-117.
[7] He Wei. Ge-based III-V semiconductor materials and solar cells[D]. Suzhou: Suzhou Insititute of Nano-Tech and Nsno-Bionics, Chinese Academy of Sciences, 2013.
[9] Zhou Xuliang. Study on silicon-based high mobility III-V semiconductor materials and transistors[D]. Beijing: Insititute of Semiconductors, Chinese Academy of Sciences, 2014.
[10] Aspnes D E, Studna A A. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV[J]. Physical Review B, 1983, 27(2): 985-1009.
[11] Bennett B, Soref R. Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb[J]. IEEE Journal of Quantum Electronics, 1987, 23(12): 2159-2166.
[12] Adachi S. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y[J]. Journal of Applied Physics, 1989, 66(12): 6030-6040.
[13] Glaser E R, Bennett B R, Shanabrook B V, et al. Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures[J]. Applied Physics Letters, 1996, 68(25): 3614-3616.
[14] Gao Ting. The study of GaSb-based laser cavity facet film[D]. Changchun: Changchun University of Science and Technology, 2014.
[20] Zhong Xingru, Liu Aimin, Lin Lanying, et al. Study of anodization coatings for GaSb solar cells[J]. Acta Energiae Solaris Sinica, 1996, 17(3): 263-265.
[21] He Zhenliang, Ding Jianning, Ma Chunhong, et al. Review of solar cell for micro thermophotovoltaic system[J]. Transducer and Microsystem Technologies, 2008, 27(2): 11-13.
[22] Guo Baozeng. Properties, preparation and applications of GaSb[J]. Semiconductor Optoelectronics, 1999, 20(2): 73-78.
[23] Tanaka A, Yoneyama T, Kimura M, et al. Control of GaInSb alloy composition grown from ternary solution[J]. Journal of Crystal Growth, 1998, 186(3): 305-308.
[24] Dutta P S. Bulk crystal growth of ternary III-V semiconductors[M]. Berlin: Springer, 2010: 281-325.
[25] Gadkari D B, Shashidharan P, Lal K B, et al. Growth morphology and compositional analysis of InxGa1-xSb crystals-grown by vertical directional solidification technique[J]. Indian Journal of Pure and Applied Physics, 1999, 37(9): 652-656.
[29] Li Jianming, Tu Hailing, Zheng Ansheng, et al. Growth of (100) Zn-doped GaSb single crystals[J]. Chinese Journal of Rare Metals, 2001, 25(5): 321-324.
[30] Yu Kai, Li Lujie, Cheng Hongjuan, et al. Study on liquid encapsulated czochralski GaSb crystal growth technology[J]. Piezoelectrics and Acoustooptics, 2016, 38(5): 787-790.
[31] Li Lujie, Cheng Hongjuan, Zhang Yingwu, et al. Research on numerical simulation for LEC-GaSb crystal growth[J]. Piezoelectrics and Acoustooptics, 2016, 38(5): 799-803.
[32] Jie Wanqi. Progress of Bridgman crystal growth technology[J]. Journal of Synthetic Crystals, 2012, 41 (S1): 24-35.
[33] Wu Guangheng, Huang Ximin, Fu Shuqing, et al. Growth of low dislocation density GaSb single crystals by horizontial method[J]. Journal of Synthetic Crystals, 1991, 20(1): 1-7.
[34] Fu Shuqing, Wu Guangheng, Ma Kai, et al. Defects in GaSb crystal grown by horizontal Bridgman method[J]. Journal of Synthetic Crystals, 1994, 23(1): 72-76.
[35] Roy U N, Basu S. Bulk growth of gallium antimonide crystals by Bridgman method[J]. Bulletin of Materials Science, 1990, 13(1): 27-32.
[36] Boiton P, Giacometti N, Duffar T, et al. Bridgman crystal growth and defect formation in GaSb[J]. Journal of Crystal Growth, 1999, 206(3): 159-165.
[38] Gadkari D B. Advances of the vertical directional solidification technique for the growth of high quality GaSb bulk crystals[J]. Journal of Chemistry and Chemical Engineering, 2012, 6(1): 65-73.
[39] Choudhari R, Joshi M, Maske D, et al. Growth and characterization of selenium (Se) doped gallium antimony (GaSb) bulk single crystals using VDS technique[C]. Proceedings of International Conference on Recent Trends in Applied Physics & Material Science, 2013, 1536(1): 877-878.
[40] Reijnen L, Brunton R, Grant I R. GaSb single-crystal growth by vertical gradient freeze[J]. Journal of Crystal Growth, 2005, 275(1/2): e595-e600.
[41] Garandet J P, Duffar T, Favier J J. Vertical gradient freeze growth and characterization of high quality GaSb single crystals[J]. Journal of Crystal Growth, 1989, 96(4): 888-898.
[42] Dutta P S. III-V ternary bulk substrate growth technology: a review[J]. Journal of Crystal Growth, 2005, 275(1/2): 106-112.
[43] Dutta P S, Kim H J, Chandola A. Controlling heat and mass transport during the vertical Bridgman growth of homogeneous ternary III-V semiconductor alloys[J]. Transactions of the Indian Institute of Metals, 2007, 60(2/3): 155-160.
[44] Corregidor V, Alves E, Alves L C, et al. Compositional and structural characterisation of GaSb and GaInSb[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005, 240(1/2): 360-364.
[45] Goza A J, Tritchler S E, Bliss D F, et al. Thermodynamic modeling of bulk ternary alloy crystal growth: Comparison of experiments and theory for GaInSb alloys[J]. Journal of Crystal Growth, 2011, 337(1): 60-64.
[46] Murakami N, Arafune K, Koyama T, et al. Measurement of growth rate by thermal pulse technique and growth of homogeneous InxGa1-xSb bulk crystals[J]. Journal of Crystal Growth, 2005, 275(3/4): 433-439.
[47] Murakami N, Hikida T, Konno A, et al. Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed[J]. Journal of Crystal Growth, 2008, 310(7/9): 1433-1437.
[48] Arivanandhan M, Rajesh G, Tanaka A, et al. Bulk growth of InGaSb alloy semiconductor under terrestrial conditions: a preliminary study for microgravity experiments at ISS[J]. Defect and Diffusion Forum, 2012, 323-325: 539-544.
[49] Tian Chaoqun, Wei Donghan, Liu Lei, et al. Etching of GaSb-based materials of mid-infrared semiconductor laser[J]. Infrared and Laser Engineering, 2013, 42(12): 3363-3366.
[50] Wang Yue, Liu Guojun, Li Juncheng, et al. Study of the ohmic contact of GaSb-based semiconductor laser[J]. Chinses J Lasers, 2012, 39(1): 0102010.