Rare-earth ions-doped mid-infrared (2.7–3 &#181;m) bulk lasers: a review [Invited]

Hongkun Nie; Feifei Wang; Junting Liu; Kejian Yang; Baitao Zhang; Jingliang He

doi:10.3788/COL202119.091407

Journals >Chinese Optics Letters >Volume 19 >Issue 9 >Page 091407 > Article

Chinese Optics Letters
Vol. 19, Issue 9, 091407 (2021)

Rare-earth ions-doped mid-infrared (2.7–3 µm) bulk lasers: a review [Invited] | Editors' Pick

Hongkun Nie¹, Feifei Wang¹, Junting Liu¹, Kejian Yang^1,2..., Baitao Zhang^1,2,* and Jingliang He^1,2|Show fewer author(s)

Author Affiliations

¹State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

²Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, China

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DOI: 10.3788/COL202119.091407 Cite this Article Set citation alerts

Hongkun Nie, Feifei Wang, Junting Liu, Kejian Yang, Baitao Zhang, Jingliang He, "Rare-earth ions-doped mid-infrared (2.7–3 µm) bulk lasers: a review [Invited]," Chin. Opt. Lett. 19, 091407 (2021) Copy Citation Text

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(a) Typical emission spectrum[42] and (b) wavelength coverages[19] of Er3+-, Ho3+-, and Dy3+-doped lasers.

Fig. 1. (a) Typical emission spectrum^[42] and (b) wavelength coverages^[19] of Er³⁺-, Ho³⁺-, and Dy³⁺-doped lasers.

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(a) Simplified energy-level diagram of Er3+-doped gain medium and sensitizer and deactivated effect of Yb3+ and Pr3+ ions; (b) the summary of the room temperature CW output power and slope efficiency of Er-doped crystalline lasers at 2.7–3 µm; (c) the schematic of a diode-side-pumped Er:YSGG slab laser at 2.79 µm[83]; (d) the experimental setup of the LD end-pumped high-power Er:YAP laser[15].

Fig. 2. (a) Simplified energy-level diagram of Er³⁺-doped gain medium and sensitizer and deactivated effect of Yb³⁺ and Pr³⁺ ions; (b) the summary of the room temperature CW output power and slope efficiency of Er-doped crystalline lasers at 2.7–3 µm; (c) the schematic of a diode-side-pumped Er:YSGG slab laser at 2.79 µm^[83]; (d) the experimental setup of the LD end-pumped high-power Er:YAP laser^[15].

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Fig. 3. (a) Experimental setup of high-energy LN EO Q-switched Er:YAG laser^[94]; (b) the schematic diagram of the LD arrays side-pumped Er,Pr:GYSGG laser (inset: side-pumped symmetry)^[60]; (c) the experimental setup and (d) output characterizations of the Fe:ZnSe passively Q-switched Er:YSGG laser^[99].

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Fig. 4. (a) Simplified energy-level diagram of Ho³⁺-doped gain medium and sensitizer and deactivated effect of Yb³⁺ and Pr³⁺ ions; (b) the fluorescence life time “reversion” of Ho:⁵I₆ and Ho:⁵I₇ in Ho,Pr:YLF crystals with doping concentrations of 0.498 at.% and 0.115 at.% for Ho³⁺ and Pr³⁺ ions^[131]; (c) the output laser power of a Raman laser end-pumped Ho,Pr:YLF (Ho³⁺: 0.498 at.% and Pr³⁺: 0.115 at.%) laser^[131]; (d) the experimental setup and laser output power of dual-end-pumped EO Q-switched Ho,Pr:YLF laser^[132].

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Fig. 5. (a) Simplified energy-level diagram of Dy³⁺-doped gain medium and sensitizer effect of Yb³⁺ ions; (b) and (c) are the schematic of the actively Q-switched Dy:ZBLAN fiber laser and corresponding laser output characterizations^[145].

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Gain Medium	Er³⁺-Doping Concentration (at.%)	Output Power (W)	Slope Efficiency (%)	Emission Wavelength (µm)	Ref.
Er:YAG crystal	50	1.5	–	2.94	[82]
Er:GGG crystal	30	0.29	19	2.8	[46]
Er:YSGG crystal	30	0.75	32	2.8	[67]
Er:YGG crystal	10	1.38	35.4	2.82–2.92	[84]
Er:YSGG slab crystal	38	1.84	11.2	2.79	[83]
Er,Pr:GGG	30	0.324	15.18	2.8	[57]
Er,Pr:GYSGG	20	0.284	17.4	2.79	[90]
Er:YLF crystal	15	1.10	35	2.8	[91]
$Er : {CaF}_{2}$ crystal	5	2	11	2.75	[70]
$Er : {SrF}_{2}$ crystal	3	1.3	9.2	2.75	[72]
Er,Pr:CaF₂ crystal	3	0.262	14.9	2.803	[58]
Er,Pr:CaF₂-SrF₂ crystal	4	0.712	41.4	2.73	[71]
$Er : {Lu}_{2} O_{3}$ crystal	7	5.90	27	2.9	[49]
$Er : Y_{2} O_{3}$ ceramic	2	14.00	26	2.7	[87]
$Er : Y_{2} O_{3}$ ceramic	0.25	24	14	2.74	[86]
${Er}^{3 +} : {Lu}_{2} O_{3}$ ceramic	11	6.70	30	2.8	[88]
Er:YAP crystal	5	6.90	33	2.9	[15]

Table 1. Laser Performance of CW Er-Doped Solid-State Crystal Lasers

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Gain Medium	SA	Output Power (mW)	Slope Efficiency (%)	Pulse Width (ns)	Pulse Repetition Rate (kHz)	Peak Power (W)	Pulse Energy (µJ)	Ref.
$Er : Y_{2} O_{3}$ ceramic	SESAM	223	13.5	350	130.6	4.9	1.71	[98]
Er:YSGG crystal	Fe:ZnSe	187	5.7	14.6	37.04	345.8	5.05	[99]
Er:YSGG crystal	${Bi}_{2} {Te}_{3} / G$	110	–	243	88	5.14	1.25	[101]
Er:YSGG crystal	${ReS}_{2}$	104	27.3	324	126	2.56	–	[102]
$Er : {SrF}_{2}$ crystal	Bi-NSs	226	13.6	980	56.20	4.10	4.02	[103]
$Er : {CaSrF}_{2}$ crystal	${Ti}_{3} C_{2} T$ _x	286	14.0	814	45.5	7.76	6.32	[104]
$Er : {SrF}_{2}$ crystal	BP	180	7.9	702	77.03	2.34	3.3	[105]
$Er : {Lu}_{2} O_{3}$ crystal	${MoS}_{2}$	1030	17.1	335	121	8.5	23.8	[106]
$Er : {SrF}_{2}$ crystal	${WS}_{2}$	428	18.2	679	38	11.26	16.58	[107]
Er:YAP crystal	${ReSe}_{2}$	526	14.8	202.8	244.6	2.2	10.6	[108]
Er:YSGG crystal	${TiSe}_{2}$	250	–	160	78	13.92	–	[109]
$Er : Y_{2} O_{3}$ crystal	Graphene	115	–	296	44.2	2.59	8.77	[110]

Table 2. Laser Performance of Diode-End-Pumped Passively Q-Switched Er3+-Doped Crystalline Lasers

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Pump Source	Gain Medium	Ho³⁺ Doping Concentration (at.%)	Output Power/Energy	Slope Efficiency (%)	Emission Wavelength (µm)	Ref.
Flashlamp	Ho,Nd:YAG	10	41 mJ at 2.94 and 3.011	0.012 at 2.94 and 3.011 µm	1.064, 1.339, 2.94, and 3.011	[117]
1123 nm Q-switched Nd:YAG laser	Ho:YAG	30	–	6	2.94	[126]
Flashlamp	$Ho : {YAlO}_{3}$	2	42 mJ	0.05	3.019	[133]
1.08 µm NdYAlO laser	$Ho : {YAlO}_{3}$	2	–	1 at 2.92	2.844–3.017	[134]
Flashlamp	Cr,Yb,Ho:YSGG	–	$\sim 520 mJ$	$\sim 0.35$	2.84–3.05	[127]
$Ti : {Al}_{2} O_{3}$ laser and 970 nm LD	Yb, $Ho : {KYF}_{4}$	0.5	11.5 and 2.5 mW	1 and 0.3	2.84	[129]
970 nm LD	Yb,Ho:YSGG	1	10.5 mJ	3.9	2.9	[119]
1150 nm LD	Ho,Pr:LLF	0.185	0.172 mW	10.8	2.95	[9]
1150 nm Raman fiber laser	Ho,Pr:LLF	0.185	1.15 W	15.5	2.95	[130]
1150 nm fiber laser	Ho,Pr:YLF	0.498	1.27 W	28.3	2.9	[131]
1150 nm Raman fiber laser	Ho,Pr:YLF	0.498	1.46 W	7.7	2.95	[132]

Table 3. Flashlamp-Pumped and CW Laser Performance of Ho-Doped 2.7–3 µm MIR Lasers

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Gain Medium	Q Switch	Output Power (mW)	Pulse Width (ns)	Pulse Repetition Rate (kHz)	Peak Power (W)	Pulse Energy (µJ)	Ref.
Ho,Pr:LLF	g-CN	101	420	93	2.86	1.1	[138]
Ho,Pr:LLF	BP	385	194.3	158.7	12.5	2.4	[130]
Ho,Pr:LLF	Monolayer graphene	88	937.5	55.7	1.4	1.6	[9]
Ho,Pr:LLF	${MoSe}_{2}$	58	818.8	71.05	1.12	0.82	[136]
Ho,Pr:LLF	Au-NPs	268	734	91	4.02	2.95	[139]
Ho,Pr:YLF	EO Q switch	268	25.2	0.5	15,900	400	[132]
Ho,Pr:LLF	${1 T - TiSe}_{2}$	130	160.5	98.8	8.2	1.32	[137]
Ho,Pr:LLF	SESAM	160	395	7.29	51.1	20.2	[140]

Table 4. Actively and Passively Q-Switched Laser Performance of 2.7–3 µm Ho-Doped Crystalline Lasers

Hongkun Nie, Feifei Wang, Junting Liu, Kejian Yang, Baitao Zhang, Jingliang He, "Rare-earth ions-doped mid-infrared (2.7–3 µm) bulk lasers: a review [Invited]," Chin. Opt. Lett. 19, 091407 (2021)

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