Author Affiliations
1State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China2Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, Chinashow less
Fig. 1. (a) Typical emission spectrum
[42] and (b) wavelength coverages
[19] of Er
3+-, Ho
3+-, and Dy
3+-doped lasers.
Fig. 2. (a) Simplified energy-level diagram of Er
3+-doped gain medium and sensitizer and deactivated effect of Yb
3+ and Pr
3+ ions; (b) the summary of the room temperature CW output power and slope efficiency of Er-doped crystalline lasers at 2.7–3 µm; (c) the schematic of a diode-side-pumped Er:YSGG slab laser at 2.79 µm
[83]; (d) the experimental setup of the LD end-pumped high-power Er:YAP laser
[15].
Fig. 3. (a) Experimental setup of high-energy LN EO
Q-switched Er:YAG laser
[94]; (b) the schematic diagram of the LD arrays side-pumped Er,Pr:GYSGG laser (inset: side-pumped symmetry)
[60]; (c) the experimental setup and (d) output characterizations of the Fe:ZnSe passively
Q-switched Er:YSGG laser
[99].
Fig. 4. (a) Simplified energy-level diagram of Ho
3+-doped gain medium and sensitizer and deactivated effect of Yb
3+ and Pr
3+ ions; (b) the fluorescence life time “reversion” of Ho:
5I
6 and Ho:
5I
7 in Ho,Pr:YLF crystals with doping concentrations of 0.498 at.% and 0.115 at.% for Ho
3+ and Pr
3+ ions
[131]; (c) the output laser power of a Raman laser end-pumped Ho,Pr:YLF (Ho
3+: 0.498 at.% and Pr
3+: 0.115 at.%) laser
[131]; (d) the experimental setup and laser output power of dual-end-pumped EO
Q-switched Ho,Pr:YLF laser
[132].
Fig. 5. (a) Simplified energy-level diagram of Dy
3+-doped gain medium and sensitizer effect of Yb
3+ ions; (b) and (c) are the schematic of the actively
Q-switched Dy:ZBLAN fiber laser and corresponding laser output characterizations
[145].
Gain Medium | Er3+-Doping Concentration (at.%) | Output Power (W) | Slope Efficiency (%) | Emission Wavelength (µm) | Ref. |
---|
Er:YAG crystal | 50 | 1.5 | – | 2.94 | [82] | Er:GGG crystal | 30 | 0.29 | 19 | 2.8 | [46] | Er:YSGG crystal | 30 | 0.75 | 32 | 2.8 | [67] | Er:YGG crystal | 10 | 1.38 | 35.4 | 2.82–2.92 | [84] | Er:YSGG slab crystal | 38 | 1.84 | 11.2 | 2.79 | [83] | Er,Pr:GGG | 30 | 0.324 | 15.18 | 2.8 | [57] | Er,Pr:GYSGG | 20 | 0.284 | 17.4 | 2.79 | [90] | Er:YLF crystal | 15 | 1.10 | 35 | 2.8 | [91] | crystal | 5 | 2 | 11 | 2.75 | [70] | crystal | 3 | 1.3 | 9.2 | 2.75 | [72] | Er,Pr:CaF2 crystal | 3 | 0.262 | 14.9 | 2.803 | [58] | Er,Pr:CaF2-SrF2 crystal | 4 | 0.712 | 41.4 | 2.73 | [71] | crystal | 7 | 5.90 | 27 | 2.9 | [49] | ceramic | 2 | 14.00 | 26 | 2.7 | [87] | ceramic | 0.25 | 24 | 14 | 2.74 | [86] | ceramic | 11 | 6.70 | 30 | 2.8 | [88] | Er:YAP crystal | 5 | 6.90 | 33 | 2.9 | [15] |
|
Table 1. Laser Performance of CW Er-Doped Solid-State Crystal Lasers
Gain Medium | SA | Output Power (mW) | Slope Efficiency (%) | Pulse Width (ns) | Pulse Repetition Rate (kHz) | Peak Power (W) | Pulse Energy (µJ) | Ref. |
---|
ceramic | SESAM | 223 | 13.5 | 350 | 130.6 | 4.9 | 1.71 | [98] | Er:YSGG crystal | Fe:ZnSe | 187 | 5.7 | 14.6 | 37.04 | 345.8 | 5.05 | [99] | Er:YSGG crystal | | 110 | – | 243 | 88 | 5.14 | 1.25 | [101] | Er:YSGG crystal | | 104 | 27.3 | 324 | 126 | 2.56 | – | [102] | crystal | Bi-NSs | 226 | 13.6 | 980 | 56.20 | 4.10 | 4.02 | [103] | crystal | x | 286 | 14.0 | 814 | 45.5 | 7.76 | 6.32 | [104] | crystal | BP | 180 | 7.9 | 702 | 77.03 | 2.34 | 3.3 | [105] | crystal | | 1030 | 17.1 | 335 | 121 | 8.5 | 23.8 | [106] | crystal | | 428 | 18.2 | 679 | 38 | 11.26 | 16.58 | [107] | Er:YAP crystal | | 526 | 14.8 | 202.8 | 244.6 | 2.2 | 10.6 | [108] | Er:YSGG crystal | | 250 | – | 160 | 78 | 13.92 | – | [109] | crystal | Graphene | 115 | – | 296 | 44.2 | 2.59 | 8.77 | [110] |
|
Table 2. Laser Performance of Diode-End-Pumped Passively Q-Switched Er3+-Doped Crystalline Lasers
Pump Source | Gain Medium | Ho3+ Doping Concentration (at.%) | Output Power/Energy | Slope Efficiency (%) | Emission Wavelength (µm) | Ref. |
---|
Flashlamp | Ho,Nd:YAG | 10 | 41 mJ at 2.94 and 3.011 | 0.012 at 2.94 and 3.011 µm | 1.064, 1.339, 2.94, and 3.011 | [117] | 1123 nm Q-switched Nd:YAG laser | Ho:YAG | 30 | – | 6 | 2.94 | [126] | Flashlamp | | 2 | 42 mJ | 0.05 | 3.019 | [133] | 1.08 µm NdYAlO laser | | 2 | – | 1 at 2.92 | 2.844–3.017 | [134] | Flashlamp | Cr,Yb,Ho:YSGG | – | | | 2.84–3.05 | [127] | laser and 970 nm LD | Yb, | 0.5 | 11.5 and 2.5 mW | 1 and 0.3 | 2.84 | [129] | 970 nm LD | Yb,Ho:YSGG | 1 | 10.5 mJ | 3.9 | 2.9 | [119] | 1150 nm LD | Ho,Pr:LLF | 0.185 | 0.172 mW | 10.8 | 2.95 | [9] | 1150 nm Raman fiber laser | Ho,Pr:LLF | 0.185 | 1.15 W | 15.5 | 2.95 | [130] | 1150 nm fiber laser | Ho,Pr:YLF | 0.498 | 1.27 W | 28.3 | 2.9 | [131] | 1150 nm Raman fiber laser | Ho,Pr:YLF | 0.498 | 1.46 W | 7.7 | 2.95 | [132] |
|
Table 3. Flashlamp-Pumped and CW Laser Performance of Ho-Doped 2.7–3 µm MIR Lasers
Gain Medium | Q Switch | Output Power (mW) | Pulse Width (ns) | Pulse Repetition Rate (kHz) | Peak Power (W) | Pulse Energy (µJ) | Ref. |
---|
Ho,Pr:LLF | g-CN | 101 | 420 | 93 | 2.86 | 1.1 | [138] | Ho,Pr:LLF | BP | 385 | 194.3 | 158.7 | 12.5 | 2.4 | [130] | Ho,Pr:LLF | Monolayer graphene | 88 | 937.5 | 55.7 | 1.4 | 1.6 | [9] | Ho,Pr:LLF | | 58 | 818.8 | 71.05 | 1.12 | 0.82 | [136] | Ho,Pr:LLF | Au-NPs | 268 | 734 | 91 | 4.02 | 2.95 | [139] | Ho,Pr:YLF | EO Q switch | 268 | 25.2 | 0.5 | 15,900 | 400 | [132] | Ho,Pr:LLF | | 130 | 160.5 | 98.8 | 8.2 | 1.32 | [137] | Ho,Pr:LLF | SESAM | 160 | 395 | 7.29 | 51.1 | 20.2 | [140] |
|
Table 4. Actively and Passively Q-Switched Laser Performance of 2.7–3 µm Ho-Doped Crystalline Lasers