High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD

Yaozheng Wu; Bin Liu; Feifan Xu; Yimeng Sang; Tao Tao; Zili Xie; Ke Wang; Xiangqian Xiu; Peng Chen; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

doi:10.1364/PRJ.424528

Journals >Photonics Research >Volume 9 >Issue 9 >Page 1683 > Article

Photonics Research
Vol. 9, Issue 9, 1683 (2021)

High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD

Yaozheng Wu¹, Bin Liu^1、3、*, Feifan Xu¹, Yimeng Sang¹, Tao Tao¹, Zili Xie¹, Ke Wang¹, Xiangqian Xiu¹, Peng Chen¹, Dunjun Chen¹, Hai Lu¹, Rong Zhang^{1、2、4、*}, and Youdou Zheng¹

Author Affiliations

¹Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

²Xiamen University, Xiamen 361005, China

³e-mail: bliu@nju.edu.cn

⁴e-mail: rzhangxmu@xmu.edu.cn

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DOI: 10.1364/PRJ.424528 Cite this Article Set citation alerts

Yaozheng Wu, Bin Liu, Feifan Xu, Yimeng Sang, Tao Tao, Zili Xie, Ke Wang, Xiangqian Xiu, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng. High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD[J]. Photonics Research, 2021, 9(9): 1683 Copy Citation Text

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