[1] Thomas D G,Hoppield J J.Isoelectronic traps due to nitrogen in gallium phosphide.Phys.Rev.,1966,150(2):680~689
[2] Logan R A,White H G,Wiegmann W.Efficient green electroluminescent junctions in GaP.Solid-State Electron,1971,14(1):55~70
[3] Landany I,Kressel H.Efficient green electroluminescent diodes by double-bin liquid-phase epitaxy.Proc.IEEE,1972,60(9):1101~1102
[4] Bachrach R Z,Lorimor O G.Recombination processes responsible for the room temperature near-band-gap radiation from GaP.Phys.Rev.(B),1973,7(2):700~713
[6] Thierry-Mieg V,Marbeut A,Chevallie J et al..Determination of the nitrogen doping of liquid phase epitaxy GaP and GaxIn1-xP alloys by optical absorption and photoluminescence.J.Appl.Phys.,1983,54(9):5358~5362
[7] Wiesner P J,Street R A.Undulation spectra of nitrogen doped gallium phosphide.Phys.Rev.Lett.,1975,34(25):1569~1571
[8] Cuthbert J D,Thomas D G.Fluorescent decay times of exitons bound to isoelectronic traps in GaP and ZnTe.Phys.Rev.,1967,154(3):763~771
[9] Reinacher N M,Brandt M S,Stutzman M.Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes.J.Appl.Phys.,1996,80(8):4541~4547
[10] Dapkus P D,Hackett Jr.W H,Lorimor O G et al..Kinetics of recombination in nitrogen-doped GaP.J.Appl.Phys.,1974,45(11):4920~4930
[11] Brantley W A,Lorimor O G,Dapkus P D et al..Effect of dislocation on green electroluminescence efficiency in GaP grown by liquid phase epitaxy.J.Appl.Phys.,1975,46(6):2629~2637