• Acta Optica Sinica
  • Vol. 20, Issue 5, 707 (2000)
[in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Fluorescence Experiment of GaP:N LPE Material Light-Emitting Region[J]. Acta Optica Sinica, 2000, 20(5): 707 Copy Citation Text show less

    Abstract

    By measuring photoluminescence spectra of each point along the slope of several polished GaP:N green light emitting liquid phase epitary (LPE) slices,the photoluminescence intensities of p- and n-type crystals are compared,it is found when nitrogen concentration is equal on two sides of p-n junction approximately,the main luminescence region is p-type region,though there is also light emitting from n-type region.The photoluminescence intensities in the former region are about 3 to 5 times of that in the latter region.
    [in Chinese], [in Chinese], [in Chinese]. Fluorescence Experiment of GaP:N LPE Material Light-Emitting Region[J]. Acta Optica Sinica, 2000, 20(5): 707
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