The development of semiconductor lithography technology requires light sources with short wavelengths. Excimer laser-based lithography light sources (i.e., KrF-248 nm and ArF-193 nm) are gradually replacing the previously used light sources based on a Hg lamp, which are the commonly used light sources in current semiconductor lithography technology. The optical components that are currently employed in lithographic light sources primarily use calcium fluoride (CaF₂) materials, which have excellent transmission characteristics in the deep ultraviolet region. In this study, the damage characteristics of the laser-material interaction in the development of the light source are analyzed. The development of the research on ultraviolet resistance of CaF₂ materials is comprehensively analyzed by investigating the physicochemical properties of CaF₂ materials, characteristics of laser radiation, and damage mechanism of the laser-material interaction. The laser damage characteristics of CaF₂ materials for different applications are compared. The approaches and methods to improve the damage thresholds of optical components are summarized.