SC | 1.105 μm | 50 MHz, 200 mW,
200 fs 1.038 μm
| GaSe | 400 μW @ 17.5 μm | 3.4% | [32]
|
43-58 mW 1.250-1.285 μm | 40 MHz, 320 fs 330-480 mW 1.02-1.04 μm | AgGaS2 | 3 mW @ 5.5 μm | 3.4% | [33]
|
1.103-1.109 μm 80 mW @ 1.103 μm | 50 MHz 1350 mW @
1.04 μm 1.038-1.046 μm
| GaSe | 16-20 μm 1.5 mW @ 18 μm | 1.9% | [34]
|
40-50 mW, 1.24-1.26 μm | 40 MHz, 300 mW
0.97-1.092 μm (SPM)
| AgGaS2 | 0.64 mW @ 4.5 μm 4.2-9 μm | 1.0% | [35]
|
300 mW, 2.03 μm 130 fs | 100 MHz, 350 mW,
72 fs 1.55 μm
| CdSiP2(CSP)
| 15 mW, 6.5 μm (2.3 optical cycles, 5.5-8 μm) | 18.0% | [36]
|
0.6 W, 60 fs 1.8-1.96 μm | 93.4 MHz, 1.6 W,
110 fs 1.55 μm
| OP-GaP | 69 mW @ 7.4 μm 6-11 μm | 20.6% | [37]
|
SSFS | 1.103 μm | 50 MHz, 200 mW,
200 fs 1.038 μm
| GaSe | 20 μW @ 18 μm | 0.2% | [38]
|
<100 mW, 340 fs,
1.6-1.865 μm
| 37 MHz, 300 mW,
640 fs 1.55 μm
| GaSe & AgGaSe 2 | up to 1.5 μW, 9.7-14.9 μm | 0.0031% | [39]
|
30 mW @ 2.5 μm | 72 MHz, 145 fs
430 mW @ 1.95 μm
| OP-GaAs | 1.3 mW 6.7-12.7 μm | 3.4% | [40]
|
5-25 mW 1.15-1.65 μm | 151 MHz, <80 fs
1.4-1.9 W @ 1.055 μm
| GaSe | up to 1.5 mW @
4.7 μm 3-10 μm
| 0.5% | [41]
|
100-250 mW, 84 fs
1.76-1.93 μm
| 250 MHz, 550 mW,
50 fs 1.55 μm
| GaSe | 4 mW @ 7.8 μm 8-14 μm | 3.7% | [42]
|
150-235 mW, 80 fs 1.93 μm | 48 MHz, 175 mW,
65 fs 1.56 μm
| OP-GaP | 7.4 mW @ 7.5 μm 6-9 μm | 20.3% | [43]
|
300 mW, 80 fs 1.965 μm | 125.07 MHz,200 mW
65 fs 1.56 μm
| OP-GaP | 5 mW @ 7.7 μm 6-9 μm | 12.3% | [44]
|
SESS | <600 mW,120 fs
1.1-1.2 μm
| 30 MHz, <6 W, 165 fs
1.03 μm
| GaSe | 5.4 mW @ 9.5 μm 7-18 μm | 0.8% | [17]
|