• Journal of Semiconductors
  • Vol. 45, Issue 1, 012301 (2024)
Yang Feng1, Zhaohui Sun1, Yueran Qi1, Xuepeng Zhan1..., Junyu Zhang2, Jing Liu3, Masaharu Kobayashi4, Jixuan Wu1,* and Jiezhi Chen1,**|Show fewer author(s)
Author Affiliations
  • 1School of Information Science and Engineering (ISE), Shandong University, Qingdao 266200, China
  • 2Neumem Co., Ltd, Hefei 230093, China
  • 3Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100084, China
  • 4Institute of Industrial Science, The University of Tokyo, Tokyo, Japan
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    DOI: 10.1088/1674-4926/45/1/012301 Cite this Article
    Yang Feng, Zhaohui Sun, Yueran Qi, Xuepeng Zhan, Junyu Zhang, Jing Liu, Masaharu Kobayashi, Jixuan Wu, Jiezhi Chen. Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance[J]. Journal of Semiconductors, 2024, 45(1): 012301 Copy Citation Text show less
    (Color online) Schematics of flash-based CIM architecture. The pulse time of Vg and the threshold voltage is individually mapped as vector and matrix, then the amount of charge can represent the result of MVM.
    Fig. 1. (Color online) Schematics of flash-based CIM architecture. The pulse time of Vg and the threshold voltage is individually mapped as vector and matrix, then the amount of charge can represent the result of MVM.
    (Color online) (a) Schematic of adopted CHEI and HHI programming scheme. (b) The energy band diagram of CHEI and HHI programming scheme.
    Fig. 2. (Color online) (a) Schematic of adopted CHEI and HHI programming scheme. (b) The energy band diagram of CHEI and HHI programming scheme.
    (Color online) The architecture of (a) ResNet 50 and (b) VGG 16 convolutional neural network.
    Fig. 3. (Color online) The architecture of (a) ResNet 50 and (b) VGG 16 convolutional neural network.
    (Color online) (a) The proposed scheme to improve both endurance and speed by optimizing the operation scheme for NN online training. (b) The comparison of the Vth tuning speed of FN tunneling and the HHI. (c) The high linearity and symmetric potentiation and depression process using the CHEI and the HHI combined methods.
    Fig. 4. (Color online) (a) The proposed scheme to improve both endurance and speed by optimizing the operation scheme for NN online training. (b) The comparison of the Vth tuning speed of FN tunneling and the HHI. (c) The high linearity and symmetric potentiation and depression process using the CHEI and the HHI combined methods.
    (Color online) (a) The I–V curves of the programmed/erased state before and after 109 cycles. (b) Enhancements of endurance at lower MW show the trade-off between MW and endurance. (c) SS value and (d) Ioff of different MW and cycles compared with the traditionalprogramming scheme, wherein each box contains 15 different memory cells.
    Fig. 5. (Color online) (a) The IV curves of the programmed/erased state before and after 109 cycles. (b) Enhancements of endurance at lower MW show the trade-off between MW and endurance. (c) SS value and (d) Ioff of different MW and cycles compared with the traditionalprogramming scheme, wherein each box contains 15 different memory cells.
    (Color online) (a) Comparisons between the proposed scheme and the traditional scheme. (b) Read disturbance of different states after 109 cycles. (c) Applications in CIFAR-10 using ResNet50 and Vgg16. Even after 109 cycles, ~90% accuracy can be achieved for the CIFAR-10 task.
    Fig. 6. (Color online) (a) Comparisons between the proposed scheme and the traditional scheme. (b) Read disturbance of different states after 109 cycles. (c) Applications in CIFAR-10 using ResNet50 and Vgg16. Even after 109 cycles, ~90% accuracy can be achieved for the CIFAR-10 task.
    RefCell typeOn/off ratioPgm.speedEnduranceDR (s)
    [8]PCM104108106
    [13]RRAM1031 μs104
    [14]FeFET105300 ns105104
    [15]3D flash105105105
    [16]Flash10210 μs105
    This work (optimized operation)Flash106 (before cycles)10 ns109105
    Table 1. The benchmark of this work and various non-volatile CIM devices.
    Yang Feng, Zhaohui Sun, Yueran Qi, Xuepeng Zhan, Junyu Zhang, Jing Liu, Masaharu Kobayashi, Jixuan Wu, Jiezhi Chen. Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance[J]. Journal of Semiconductors, 2024, 45(1): 012301
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