Electron Reflection at Interface in Superlattice and Induced Photocu rrentCharacteristics

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 18 >Issue 5 >Page 462 > Article

Chinese Journal of Quantum Electronics
Vol. 18, Issue 5, 462 (2001)

Electron Reflection at Interface in Superlattice and Induced Photocu rrentCharacteristics

[in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Electron Reflection at Interface in Superlattice and Induced Photocu rrentCharacteristics[J]. Chinese Journal of Quantum Electronics, 2001, 18(5): 462 Copy Citation Text

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References

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[2] Sadal Adach. GaAs, AlAs and AlxGa1-xAs: Material parameters for use in research anddevices applications. [J]J. Appl. Phys., 1985, 58(3): R1～29

[3] Levine B F et al. Tunable long-wavelength detectors using graded barrier quantumwells grown by electron beam source molecular beam epitary [J]. Appl. Phys. Lett., 1990,57(4): 383

[4] Manasreh M D et al. Intersubband Infraredabsorption in GaAs/A10.3Ga0.7As quantumwell structure [J]. Appl,Phys. Lett., 1990, 57(17): 1790

[5] Choe J W et al. Exchange interaction effects in quantum well infrared detectors[J]. Appl. Phys, Lett., 1990,56(17): 1679

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