• Chinese Journal of Quantum Electronics
  • Vol. 18, Issue 5, 462 (2001)
[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Electron Reflection at Interface in Superlattice and Induced Photocu rrentCharacteristics[J]. Chinese Journal of Quantum Electronics, 2001, 18(5): 462 Copy Citation Text show less

    Abstract

    Photocurrent spectrum for GaAs/AlGaAs superlattice at T = 77 K was measured. A strong photocurrent peak at ■ = 1598 cm-1 in the photocurrent spectrum was observed. It;was believed that the strong photocurrent peak is relevant to electron reflection at interface in superlattice. On the basis of the point of view, calculated position of peak of photocurrent is in very good agreement with experiment result.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Electron Reflection at Interface in Superlattice and Induced Photocu rrentCharacteristics[J]. Chinese Journal of Quantum Electronics, 2001, 18(5): 462
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