[1] Leonov V, Schaijk R Van, Hoof C V. Charge retention in a patterned SiO2/Si3N4 electret［J］. IEEE Sensors Journal, 2013, 13(9): 3369-3376.

[2] Denisse C M M, Janssen J F M, Habraken F H P M, et al. Infrared absorption study of N-H bonds in plasma deposited silicon oxynitride films［J］. Applied Physics Letters, 1988, 52(16): 1308-1310.

[3] Oliveira R A R, Ribeiro M, Pereyra I, et al. Silicon clusters in PECVD silicon-rich SiOxNy［J］. Materials Characterization, 2003, 50(2): 161-166.

[4] Zhang Fu, Rong Limei, Yuan Zhiguang, et al. Characterization of densification for SiO2 film［J］. Microelectronics, 2011, 41(5): 759-762.

[5] Zu Jifeng, Geng Wanzhen, Hong Jing, et al. The technology control and properties of PECVD SiON films and potential applications［J］. Acta Optica Sinica, 1995, 15(7): 913-916.

[6] Hofmann M, Schmidtl C, Kohnl N, et al. Stack system of PECVD amorphous silicon and PECVD silicon oxide for silicon solar cell rear side passivation［J］. Progress in Photovoltaics Research and Application, 2008, 16(6): 509-518.

[7] Guo Wentao, Tan Manqing, Jiao Jian, et al. Study on improving the compactness of SiO2 thin film by PECVD［J］. Journal of Synthetic Crystals, 2013, 42(4): 577-580.

[8] Wang Lijie, Tong Cunzhu, Tian Sicong, et al. A study of characteristics of asymmetric Bragg reflection wave guide diode lasers［J］. Laser & Optoelectronics Progress, 2013, 50(9): 091401.

[9] Li Shibin, Wu Zhiming, Zhu Kuipeng, et al. Effect of working gas pressure on the optical properties of RF-PECVD a-Si∶H films［J］. Journal of Optoelectronics·Laser, 2008, 19(3): 352-356.

[10] Lou Lifang, Sheng Zhongyan, Yao Kuihong, et al. PECVD deposition and characterization of thick silica film for optical waveguide［J］. Acta Optica Sinica, 2004, 24(1): 24-28.

[11] Gharghi M, Sivoththaman S. Graded silicon based PECVD thin film for photovoltaic applications［C］. Proceedings of SPIE, 2007, 6674: 66740A.

[12] Lin Juan, Yang Peizhi, Hua Qilin. Microstructure and luminous property of multilayer SiNx/Si/SiNx thin films［J］. Acta Optica Sinica, 2013, 33(2): 0231003.

[13] Dong Wei, Zuo Ran, Lai Xiaohui, et al. Simulation of stresses in GaN thin film on sapphire［J］. Laser & Optoelectronics Progress, 2013, 50(7): 073101.

[14] Wu Tao, Jiang Xianfeng. Fabrication process study of silicon nitride passivation layer on GaAs substrate at low temperature［J］. Laser & Optoelectronics Progress, 2015, 52(3): 031403.