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    Journals >Laser & Optoelectronics Progress >Volume 53 >Issue 12 >Page 123101 > Article
    • Laser & Optoelectronics Progress
    • Vol. 53, Issue 12, 123101 (2016)
    Characteristics of Compactness of SiO2 Thin Films Prepared by PECVD Method
    Xiao Heping*, Sun Rujian, Ma Xiangzhu, Yang Kai, and Zhang Shuangxiang
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    DOI: 10.3788/lop53.123101 Cite this Article Set citation alerts
    Xiao Heping, Sun Rujian, Ma Xiangzhu, Yang Kai, Zhang Shuangxiang. Characteristics of Compactness of SiO2 Thin Films Prepared by PECVD Method[J]. Laser & Optoelectronics Progress, 2016, 53(12): 123101 Copy Citation Text show less
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    Xiao Heping, Sun Rujian, Ma Xiangzhu, Yang Kai, Zhang Shuangxiang. Characteristics of Compactness of SiO2 Thin Films Prepared by PECVD Method[J]. Laser & Optoelectronics Progress, 2016, 53(12): 123101
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