• Laser & Optoelectronics Progress
  • Vol. 61, Issue 1, 0116005 (2024)
Xiaojun Li1, Xiaqing Jiang1, Caiming Chen1, Ruoxi Gao1, Zhangwen Long1、2、*, and Jianbei Qiu1、2、**
Author Affiliations
  • 1Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, Yunnan , China
  • 2Key Lab of Advanced Materials of Yunnan Province, Kunming 650093, Yunnan , China
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    DOI: 10.3788/LOP232340 Cite this Article Set citation alerts
    Xiaojun Li, Xiaqing Jiang, Caiming Chen, Ruoxi Gao, Zhangwen Long, Jianbei Qiu. Photostimulated Information Storage Material for Novel Near-Infrared Writing Based on Thermal-Assisted Excitation (Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(1): 0116005 Copy Citation Text show less
    Phase and emission properties of BaSi2O5∶Eu2+,Nd3+,Yb3+ and NaYF4∶Yb3+,Tm3+ samples. (a) X-ray diffraction pattern; (b) photoluminescence, photoluminescence excitation, absorption, and photo-stimulated luminescence spectra of BaSi2O5∶Eu2+,Nd3+,Yb3+; (c) up-conversion spectra of NaYF4∶Yb3+,Tm3+ with 808 nm shortwave passing filter; (d) up-conversion spectra of NaYF4∶Yb3+,Tm3+ without 808 nm shortwave passing filter
    Fig. 1. Phase and emission properties of BaSi2O5∶Eu2+,Nd3+,Yb3+ and NaYF4∶Yb3+,Tm3+ samples. (a) X-ray diffraction pattern; (b) photoluminescence, photoluminescence excitation, absorption, and photo-stimulated luminescence spectra of BaSi2O5∶Eu2+,Nd3+,Yb3+; (c) up-conversion spectra of NaYF4∶Yb3+,Tm3+ with 808 nm shortwave passing filter; (d) up-conversion spectra of NaYF4∶Yb3+,Tm3+ without 808 nm shortwave passing filter
    Trap filling properties of BaSi2O5∶Eu2+,Nd3+,Yb3+ under thermal‑assisted excitation. (a) Thermal‑assisted TL curves under low-power 365 nm excitation; (b) thermal‑assisted TL curves under low-power 450 nm excitation (inset: TL curve excited at room temperature at 254 nm, 6 W mercury lamp, and the comparison proves that BaSi2O5∶Eu2+,Nd3+,Yb3+ is still a shortwave ultraviolet activated PSL material)
    Fig. 2. Trap filling properties of BaSi2O5∶Eu2+,Nd3+,Yb3+ under thermal‑assisted excitation. (a) Thermal‑assisted TL curves under low-power 365 nm excitation; (b) thermal‑assisted TL curves under low-power 450 nm excitation (inset: TL curve excited at room temperature at 254 nm, 6 W mercury lamp, and the comparison proves that BaSi2O5∶Eu2+,Nd3+,Yb3+ is still a shortwave ultraviolet activated PSL material)
    Optical storage properties of composite systems excited by 980 nm laser. (a) TL curves of composite powder after 980 nm laser excitation with variable powers; (b) up-conversion spectra of composite silicone film excited by 980 nm laser with variable powers; (c) TL curves of composite powder after 980 nm laser with same power at different ambient temperatures; (d) thermal‑assisted TL curves of composite powders after high-power 450 nm LED excitation
    Fig. 3. Optical storage properties of composite systems excited by 980 nm laser. (a) TL curves of composite powder after 980 nm laser excitation with variable powers; (b) up-conversion spectra of composite silicone film excited by 980 nm laser with variable powers; (c) TL curves of composite powder after 980 nm laser with same power at different ambient temperatures; (d) thermal‑assisted TL curves of composite powders after high-power 450 nm LED excitation
    Experimental demonstration of intensity multiplexing optical storage based on composite silicone film. (a) Operation diagram; (b) signal photos of intensity multiplexing; (c) signal photos of continuous heat release
    Fig. 4. Experimental demonstration of intensity multiplexing optical storage based on composite silicone film. (a) Operation diagram; (b) signal photos of intensity multiplexing; (c) signal photos of continuous heat release
    Write type/materials typeTypical materialWrite waveAdvantageDisadvantageReason
    Traditional single component PSL materialsBaFBr:Eu2+[38;SrAl2O4∶Eu2+,Dy3+[39X-ray,UV,blueHigh capacity,diverse typesExpensive light sources,unfavorable for biological applicationsEfficient excitation of near-conduction band energy levels for excellent filling efficiency
    Single component up-conversion PSL materials-without thermal assistanceZn3Ga2GeO8∶Cr3+,Yb3+,Er3+[15NIR laserSizable capacity,biological applicationsFocused on blue and red light writing PSL systemLow blue and violet light emission during up-conversion process,write laser may release captured photons
    Single component up-conversion PSL materials-with thermal assistanceZn3Ga2GeO8∶Cr3+[16NIR laserSizable capacity,biological applicationsNeed to have a suitable energy level structure(narrow bandgap)Similar to phonon-assisted up-conversion,the band-gap width that can be crossed is limited
    Single component upconversion-like PSL materialsCaSnO3∶Bi2+[17NIR LEDSizable capacity,biological applicationsNeed to have a precise energy level structureLow excitation level position of the luminescent center needs to be equivalent to the position of the deep trap level
    Composite component up-conversion PSL material-without thermal assistanceNaYF4∶Tm3+@NaYF4/Zn1.1Ga1.8O4∶Ge4+,Cr3+[18NIR laserSizable capacity,biological applicationsFocused on blue and red light writing PSL systemLow blue and violet light emission during up-conversion process,write laser may release captured photons
    Composite component up-conversion PSL material-with thermal assistanceThis workNIR laserSizable capacity,activate the UV-written PSL materPSL materials have good “thermal increment” performanceLow blue and violet light emission during up-conversion process,write laser may release captured photons
    Single component ultraviolet emitting up-conversion PSL materialY3Al2Ga3O12∶Pr3+,Eu3+[40Blue laserUseful capacity,single laser for reading,writing,and erasingMay be limited to UV emission and PSL materials activated by Pr3+ ionHighly dependent on the bandgap structure of the matrix and the energy level structure of the luminescent center ion
    Table 1. Comparison of advantages and disadvantages of different optical storage modes based on PSL materials
    Xiaojun Li, Xiaqing Jiang, Caiming Chen, Ruoxi Gao, Zhangwen Long, Jianbei Qiu. Photostimulated Information Storage Material for Novel Near-Infrared Writing Based on Thermal-Assisted Excitation (Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(1): 0116005
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