• Laser & Optoelectronics Progress
  • Vol. 56, Issue 19, 190003 (2019)
Chao Wei, Yuping Ma*, Yuan Han, Yao Zhang, and Xuehui Chen
Author Affiliations
  • School of Mechanical and Electrical Engineering, Anhui Jianzhu University, Hefei, Anhui 230601, China
  • show less
    DOI: 10.3788/LOP56.190003 Cite this Article Set citation alerts
    Chao Wei, Yuping Ma, Yuan Han, Yao Zhang, Xuehui Chen. Femtosecond Laser Processing of Ultrahard Materials[J]. Laser & Optoelectronics Progress, 2019, 56(19): 190003 Copy Citation Text show less
    Hardness and atomic structures of two typical ultrahard materials. (a) Hardness of different materials; (b) cubic crystal structures of diamond and CBN
    Fig. 1. Hardness and atomic structures of two typical ultrahard materials. (a) Hardness of different materials; (b) cubic crystal structures of diamond and CBN
    Timescale of physical phenomena involved in laser-material interaction[21]
    Fig. 2. Timescale of physical phenomena involved in laser-material interaction[21]
    Schematic of difference between long-pulse laser processing and short-pulse laser processing[23]
    Fig. 3. Schematic of difference between long-pulse laser processing and short-pulse laser processing[23]
    Schematics of evolution of maximum temperature of target and pulse energy incubation effect in femtosecond laser processing[26-27]. (a) Evolution of maximum temperature of target; (b) pulse energy incubation effect
    Fig. 4. Schematics of evolution of maximum temperature of target and pulse energy incubation effect in femtosecond laser processing[26-27]. (a) Evolution of maximum temperature of target; (b) pulse energy incubation effect
    Functional relationship between ablation rate of diamond and laser energy density under different pulse durations
    Fig. 5. Functional relationship between ablation rate of diamond and laser energy density under different pulse durations
    Schematics of non-linear absorption and avalanche ionization mechanism[36]
    Fig. 6. Schematics of non-linear absorption and avalanche ionization mechanism[36]
    Fitting curve between logarithmic laser power and square of dimple diameter machined by femtosecond laser on SC diamond[25]
    Fig. 7. Fitting curve between logarithmic laser power and square of dimple diameter machined by femtosecond laser on SC diamond[25]
    Range of laser ablation volume (gray area)
    Fig. 8. Range of laser ablation volume (gray area)
    SEM photographs of polycrystalline diamond side profiles processed at different pulse energies, scanning numbers, and focusing objective magnification
    Fig. 9. SEM photographs of polycrystalline diamond side profiles processed at different pulse energies, scanning numbers, and focusing objective magnification
    Common femtosecond laser processing methods for ultrahard materials. (a) Laser direct writing[48]; (b) accelerated beam[59]; (c) dry etching assistant processing[53]; (d) intensity mask projection processing[64]; (e) femtosecond laser dual-mode rapid fabrication system based on SLM[61]
    Fig. 10. Common femtosecond laser processing methods for ultrahard materials. (a) Laser direct writing[48]; (b) accelerated beam[59]; (c) dry etching assistant processing[53]; (d) intensity mask projection processing[64]; (e) femtosecond laser dual-mode rapid fabrication system based on SLM[61]
    Micro-morphologies of ablated area obtained by femtosecond laser spot etching and line etching at different laser powers. (a)-(f) Spo tetching; (g)-(i) line etching
    Fig. 11. Micro-morphologies of ablated area obtained by femtosecond laser spot etching and line etching at different laser powers. (a)-(f) Spo tetching; (g)-(i) line etching
    Graphite channel arrays fabricated by femtosecond laser with energy of 4 μJ. N is number of pulses; Z is step length; side-view low-power optical micrographs illustrate continuity of graphitization channels through bulk diamond
    Fig. 12. Graphite channel arrays fabricated by femtosecond laser with energy of 4 μJ. N is number of pulses; Z is step length; side-view low-power optical micrographs illustrate continuity of graphitization channels through bulk diamond
    Applications of femtosecond laser direct writing. (a) Processing process of BLPCD micromilling tool, from left to right: BLPCD blank, FSPL ball forming, finished BLPCD micromilling tool; (b) SEM photograph of SC diamond plane refractive lens
    Fig. 13. Applications of femtosecond laser direct writing. (a) Processing process of BLPCD micromilling tool, from left to right: BLPCD blank, FSPL ball forming, finished BLPCD micromilling tool; (b) SEM photograph of SC diamond plane refractive lens
    Applications of SLM technologies. (a)(b) Letters processed by 10 pulses on surface of polycrystalline diamond, with dotted double arrows representing direction of laser polarization; (c) letter “S” processed by 50 pulses on surface of polycrystalline diamond; (d) SEM photograph of convex SC diamond edges processed by femtosecond laser acceleration beam
    Fig. 14. Applications of SLM technologies. (a)(b) Letters processed by 10 pulses on surface of polycrystalline diamond, with dotted double arrows representing direction of laser polarization; (c) letter “S” processed by 50 pulses on surface of polycrystalline diamond; (d) SEM photograph of convex SC diamond edges processed by femtosecond laser acceleration beam
    Material removal mechanism of nt-CBN by femtosecond laser spot etching at low power[82]
    Fig. 15. Material removal mechanism of nt-CBN by femtosecond laser spot etching at low power[82]
    nt-CBN tool. (a)(b) Blanks of nt-CBN micro-tool processed by femtosecond laser; (c) finished nt-CBN micro-tool after focused ion beam grinding
    Fig. 16. nt-CBN tool. (a)(b) Blanks of nt-CBN micro-tool processed by femtosecond laser; (c) finished nt-CBN micro-tool after focused ion beam grinding
    Surface micro-morphologies of CBN tool fabricated by femtosecond laser and cutting experimental results of different tools under different cutting conditions (dry/wet processing). (a) Surface micro-morphologies; (b) comparison of friction coefficients of polished surface, parallel, orthogonal, and banded micro-textured tools; (c) relationship between cutting length and adhension area of different micro-textured tools; (d) atom concentration of targets on surface of different micro-textured tools
    Fig. 17. Surface micro-morphologies of CBN tool fabricated by femtosecond laser and cutting experimental results of different tools under different cutting conditions (dry/wet processing). (a) Surface micro-morphologies; (b) comparison of friction coefficients of polished surface, parallel, orthogonal, and banded micro-textured tools; (c) relationship between cutting length and adhension area of different micro-textured tools; (d) atom concentration of targets on surface of different micro-textured tools
    Experimental results of surface adhesion degree of micro-textured tools[87]. (a) Three-dimensional profile of rake face of CBN tools after cutting experiment under different parameters, where white arrow indicates cutting adhesion area of aluminum alloy; (b) changes of cutting chips when cutting length increases to 1800 m under dry friction. Processing results marked by blue arrow and box attribute to traditional tool, while red arrow and box marked results are processed by optimum tool
    Fig. 18. Experimental results of surface adhesion degree of micro-textured tools[87]. (a) Three-dimensional profile of rake face of CBN tools after cutting experiment under different parameters, where white arrow indicates cutting adhesion area of aluminum alloy; (b) changes of cutting chips when cutting length increases to 1800 m under dry friction. Processing results marked by blue arrow and box attribute to traditional tool, while red arrow and box marked results are processed by optimum tool
    Relationship between cutting length and flank friction width of traditional CBN tools and micro-textured CBN tools under dry and wet conditions
    Fig. 19. Relationship between cutting length and flank friction width of traditional CBN tools and micro-textured CBN tools under dry and wet conditions
    PropertyDiamondCBNApplication
    StructureFd3m cubeF43m cube-
    Unit cell /(10-10 m)3.5673.615-
    Interatomic spacing /(10-10 m)1.541.54-
    Atomic density /(1023 cm-3)1.771.68-
    Density /(g·cm-3)3.513.48-
    Graphitization /℃14001550-
    Melting point /K41003246Tools
    Hardness /GPa81±1875Tools
    Elastic modulus /GPa1140850Tools
    Thermal conductivity /[W·m-1·K-1]2000-24001300Radiator
    Doping elementB, Be, B-SB, Be, Mg, Al, Si, S, PSemiconductor
    Resistivity /(Ω·cm)10161016Semiconductor
    Breakdown volt/(105 V·cm-1)1000.3Insulating materials
    Thermal expansion coefficient /(10-6 K-1)0.8 (298 K)3.5(298 K)Photonics andmicrowave components
    Dielectric constant5.74.5High-power switches
    Refractive index2.4172.117Photonics andmicrowave components
    Transparency225 nm to farinfrared ray225 nm to farinfrared rayPhotonics andmicrowave components
    Sound propagation /(km·s-1)18.4, along<111> direction-Silencing elements
    Bandgap direct /eV5.56.2-6.6Electronic components
    Oxidation stability /℃6001200Protective coating
    Reactivity with ferrous metalsHighLowTools
    Corrosion resistanceStable in HFStable in HFElectrochemistry
    Negative electron affinityElectronic emitter
    BiocompatibilityBiomedical
    Carrier mobility /(cm2·V-1·s-1)Hole: 3800-Anti-radiation detector
    Electron: 4500-Photoelectric instruments
    Table 1. Properties and applications of diamond and CBN
    Chao Wei, Yuping Ma, Yuan Han, Yao Zhang, Xuehui Chen. Femtosecond Laser Processing of Ultrahard Materials[J]. Laser & Optoelectronics Progress, 2019, 56(19): 190003
    Download Citation