Simulation of Interfacial Stress in Sapphire-GaN Heterogeneous Film System

Zenglin Li; Ran Zuo

doi:10.3788/LOP57.193102

[1] Chung K, Lee C H, Yi G C. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices[J]. Science, 330, 655-657(2010). http://www.ncbi.nlm.nih.gov/pubmed/21030653

[2] Zhang S, Shi J J, Zhang M et al. First-principles investigation on optical properties of GaN and InGaN alloys[J]. Journal of Physics D: Applied Physics, 44, 495304(2011).

[3] Taniyasu Y, Kasu M, Makimoto T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres[J]. Nature, 441, 325-328(2006).

[4] Moridi A, Ruan H H, Zhang L C et al. A finite element simulation of residual stresses induced by thermal and lattice mismatch in thin films. [C]∥Seventh International Conference on Advances and Trends in Engineering Materials and Their Applications, July 4, 2011, Milan.[S.l.]:[s.n.], 57(2011).

[5] Pramanik A, Zhang L C. Residual stresses in silicon-on-sapphire thin film systems[J]. International Journal of Solids and Structures, 48, 1290-1300(2011).

[6] Moridi A, Ruan H H, Zhang L C et al. Residual stresses in thin film systems: effects of lattice mismatch, thermal mismatch and interface dislocations[J]. International Journal of Solids and Structures, 50, 3562-3569(2013).

[7] Li C A, Yang M D, Quan B Q et al. Stress simulation analysis of multilayer film deposition[J]. Laser & Optoelectronics Progress, 55, 043101(2018).

[8] Dong W, Zuo R, Lai X H et al. Simulation of stresses in GaN thin film on sapphire[J]. Laser & Optoelectronics Progress, 50, 073101(2013).

[9] [M]. Thin film material: stress, formation of defect and evolution of surface, 49(2007).

Freund L B, Freund L B, Suresh S, Suresh S[M]. 薄膜材料——应力、缺陷的形成和表面演化, 49(2007).

[10] Zhang R. Thermal stress distribution for GaAs directly grown on patterned silicon[D]. Beijing: Beijing University of Posts and Telecom(2018).

[12] Zhang L, Shao Y L, Hao X P et al. Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth[J]. Journal of Crystal Growth, 334, 62-66(2011).

[13] Zhang L, Mahdi M. The plastic behaviour of silicon subjected to micro-indentation[J]. Journal of Materials Science, 31, 5671-5676(1996).

[14] Labbane M, Saha N K, Ting E C. Yield criterion and loading function for concrete plasticity[J]. International Journal of Solids and Structures, 30, 1269-1288(1993).

[15] Hull R. Properties of crystalline silicon[J]. Journal of Applied Physics, 89, 4349-4353(1999).

[16] Flinn P A. A new X-ray diffractometer design for thin-film texture, strain, and phase characterization[J]. Journal of Vacuum Science & Technology B, 6, 1749-1755(1988).