[1] Saito T, Suzuki T, Yoshino M, et al. Ultra line-narrowed ArF excimer laser G42A for sub-90-nm lithography [C]. SPIE, 2003, 5040: 1704-1711.
[2] Yoshino M, Nakarai H, Ohta T, et al. High-power and high-energy stability injection lock laser light source for double exposure or double patterning ArF immersion lithography [C]. SPIE, 2008, 6924: 69242S.
[3] Fleurov V, Rokitski S, Bergstedt R, et al. XLR 600i: Recirculating ring ArF light source for double patterning immersion lithography [C]. SPIE, 2008, 6924: 69241R.
[4] International technology roadmap for semiconductors 2007 edition lithography [OL]. http://www.itrs.net/Links/2007ITRS/2007- Chapters/2007- Lithography.pdf.
[5] Piscani E C, Ashworth D, et al. Continuing 193 nm optical lithography for 32 nm imaging and beyond [C]. SPIE, 2008, 6924: 692421.
[6] Hazelton A J, Wakamoto S, Hirukawa S, et al. Double patterning requirements for optical lithography and prospects for optical extension without double patterning [C]. SPIE, 2008, 6924: 69240R.
[7] Miao Xiangqun, Huli L, Chen H, et al. Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22 nm node and beyond [C]. SPIE, 2008, 6924: 69240A.
[8] Fleurov V B, Colon III D J, Brown D J W, et al. Dual-chamber ultra line-narrowed excimer light source for 193 nm lithography [C]. SPIE, 2003, 5040: 1694-1703.
[9] Ishihara T, Besaucele H, Maley C, et al. Long-term reliable operation of a MOPA-based ArF light source for microlithography [C]. SPIE, 2004, 5377: 1858-1865.
[10] Ishihara T, Rafac R, Dunstan W, et al. XLA-200: the third-generation ArF MOPA light source for immersion lithography [C]. SPIE, 2005, 5754: 773-779.
[11] Trintchouk F, Ishihara T, Gillesoie W, et al. XLA 300: the fourth-generation ArF MOPA light source for immersion lithography [C]. SPIE, 2006, 6154: 615423.
[12] Cymer Inc. An introduction to ring technology [OL]. http//www.cymer.com.
[13] Brown D J W, O’keeffe P, Fleurov V B, et al. XLR 500i: recirculating ring ArF light source for immersion lithography [C]. SPIE, 2007, 6520: 652020.
[14] Gigaphoton Inc. Injection-locking technology [OL]. http://www.gigaphoton.com/e/technology/gigatwin1.html.
[15] Mizoguchi H, Inoue T, et al. High power injection lock laser platform for ArF dry/wet lithography [C]. SPIE, 2005, 5754: 780-789.
[16] Wakabayashi O, Ariga T, Kumazaki T, et al. Beam quality of a new-type MOPO laser system for VUV laser lithography [C]. SPIE, 2004, 5377: 1772-1780.
[17] Hidenori W, Shigeo K, Satoshi T, et al. Reliable high power injection locked 6kHz 60 W laser for ArF immersion lithography [C]. SPIE, 2007, 6520: 652031.
[18] Kumazaki T, Suzaki T, Tanaka S, et al. Reliable high power injection locked 6 kHz 60 W laser for ArF immersion lithography [C]. SPIE, 2008, 6924: 69242R.
[19] Gigaphoton Inc. Challenges in the injection locking method [OL]. http:/ /www.gigaphoton.com/e/techno-logy/gigatwin3.html.
[20] Hsueh B Y, Wu Hungyi, Jang L, et al. Effects of laser bandwidth on tool to tool CD matching [C]. SPIE, 2008, 6924: 69244K.
[21] Huggins K, Tsuyoshi T, Ong M, et al. Effect of laser bandwidth on OPE in a modern lithography tool [C]. SPIE, 2006, 6154: 61540Z.
[22] O’brien K, Dunstan W J, Riggs D, et al. Performance demonstration of significant availability improvement in lithography light sources using GLXTM control system [C]. SPIE, 2008, 6954: 69242Q.