Herein, a Schottky junction UV photodetector based on multilayer PtSe₂/TiO₂ nanorod (NR) arrays is proposed. The multilayer PtSe₂ film and TiO₂ NRs are synthesized using chemical vapor deposition and hydrothermal methods, respectively. The wet transfer method is used to fabricate the multilayer PtSe₂/TiO₂ NRs Schottky junction device with upper and lower structures. Photoelectric measurement results show that the designed device exhibits a high sensitivity to 365-nm UV light. The switch ratio of the device can reach as high as 5.5×10 ⁴, the responsivity and specific detectivity are 57 mA/W and 8.36×10 ¹¹ Jones, respectively. Moreover, the device shows a good stability and the photocurrent remains nearly unchanged after storage in air for 5 weeks. Finally, the image sensing characteristics of a single device are investigated, which confirm that the PtSe₂/TiO₂ photodetector can be used as an image sensor to achieve simple UV pattern imaging.