Fig. 1. Best laboratory certified efficiencies for CIGS solar cells
[19] Fig. 2. (a,b)Schematics of the device structure of the small-area cell and the monolithically-connected module structure,respectively.(c)Schematics of the typical band profile in the CIGS absorber layer. E
C and E
V represent the energetic positions of the conduction band minimum and the valence band maximum,respectively. Front and back correspond to the buffer/CIGS and the CIGS/Mo interfaces,respectively
[20] Fig. 3. Schematic illustration of different co-evaporation processes:(a)single stage process,(b)bilayer or Boeing process in which the first layer was deposited at lower substrate temperature, and the second layer was deposited at a higher substrate temperature,(c)three stage process in which In and Ga are deposited in the first and third stage, whereas Cu was deposited in the second stage(after Ref. [
33])
Fig. 4. Fabrication process of Solar Frontier’s baseline CIGS solar cell
[20] Fig. 5. (a)Schematics of the profiles of composition and bandgap in the CIGS absorber layer to explain the condition of the device simulation.(b)Device simulation results with varying surface [S]/([S]+[Se])composition and position of the bandgap minimum(
xEg,min)(after Ref. [
20])
Fig. 7. After Na incorporation into the CIGS film,the following changes were observed:(a)enhanced carrier density and grain boundary passivation,(b)gallium segregation,and(c)changes in crystallographic orientation(after Ref.[
45])
Fig. 8. Surface chemical analysis(a)Schematic view of the three investigated absorbers. The purple layer on the KF absorber indicates the modified surface composition,(b-e)XPS peak of Cu 2p
3/2,In 3d
5/2,Ga 2p
3/2 and Se 3s,respectively,obtained from the surface of CIGS absorbers with no alkali evaporation(no PDT),only NaF addition and only KF addition,(f)Sputtering of the CIGS absorber subjected to KF-PDT shows the appearance of the Cu 2p
3/2 peak within the first approximately 20 nm with similar intensity as in the case of no PDT,(g)K is clearly measurable at the surface up to a depth of approximately 20 nm,(h)Schematic view of two absorbers measured after sputtering through the CdS layer,(i)XPS peak of Cu 2p
3/2,In 3d
5/2,Ga 2p
3/2 and Se 3s,respectively,at the CdS/CIGS interface with only NaF addition and only KF addition,(m)XPS spectra of K at different sputtering depths(after Ref.[
48])
Fig. 9. Schematic drawing of the NaF PDT and the NaF&KF PDT applied on low-temperature coevaporated CIGS thin films
[49] Fig. 10. External quantum efficiency for CIGS cells with different buffer materials. All cells with anti-reflection coatings. The shaded areas below the curves represent the current gain relative to the corresponding CdS reference when available(after Ref.[
53])
Fig. 11. (a)Comparison of the optical properties of AZO and BZO with comparable sheet resistance. The high transmission in the near-infrared region for BZO stems from the reduced carrier density(AZO
n=4.4*10
20 cm
-3,BZO
n=9.2*10
19 cm
-3)(after Ref.[
64]).(b)Damp heat stability(85 °C,85% r.h.)of different,nonencapsulated TCO materials(after Ref.[
70-
72])
Fig. 12. Photovoltaic application products such as flexible CIGS thin film solar cell template and building integration
[73] Fig. 13. (a)Schematic of the 4-T perovskite/CIGS tandem solar cell.(b)
J-
V curves of the CIGS cell with and without filtering,and reverse and forward scanning curves(scanning rate of 50 mV s
-1)and steady-state efficiency of the semi-transparent perovskite.(c)Transmittance and absorption spectra and EQE of the transparent perovskite cells,and EQE of the standalone CIGS and that placed under a filter(after Ref.[
89])
Fig. 14. Performance of the perovskite/CIGS tandem cells.(a)Schematic and cross-sectional SEM image of the monolithic perovskite/CIGS tandem solar cell.(b)
J-
V curve and efficiency at the maximum power point(inset)of the champion tandem device.(c)EQE spectra for the subcells of the monolithic perovskite/CIGS tandem solar cell.(d)Stability test of the monolithic perovskite/CIGS tandem solar cell. The unencapsulation device maintained 88% of their initial PCE after 500 hours of aging under continuous 1-sun illumination and maximum power point tracking at 30 °C ambient environment. The inset shows that the device can recover 93% of its initial performance after a 12-hour resting period without load and illumination(after Ref.[
90])
方法 | 优点 | 缺点 |
---|
共蒸发 | 对于实验室小电池是一种良好的制备技术 | 同时控制不同蒸发源是困难和化学计量变化大,重现性低和大面积均匀性差 | 磁控溅射 | 较好地控制沉积速度和获得较好结晶性,有利于工业化生产 | 运行成本较高,容易产生多相,带隙梯度调控困难 | 电沉积 | 低成本、室温沉积 | 工艺优化困难 | 丝网印刷术 | 材料损耗低,堆积密度大,高产能 | 在喷涂过程中原材料损耗大 | 旋涂法 | 实验室制备薄膜均匀性,设备成本低,操作方便 | 大面积不均匀,卷对卷工艺不兼容 | 刮涂法 | 材料浪费少,卷对卷工艺兼容,更好的化学计量控制 | 溶剂蒸发速度慢,容易堆积 | 分子束外延 | 超高真空沉积造成污染最小,该方法有利于基础研究,如缺陷和相分离研究 | 不适合工业化生产,大面积沉积尚未报道,高效率尚未报道 | 气相外延生长 | 对基础研究有用,生长速度比分子束外延快 | 不适合工业化生产,大面积器件未报道,工业化生产不兼容 | 电子束沉积 | 良好的化学计量比和高纯相薄膜 | 大面积沉积未见报道,工业生产不兼容 | 脉冲激光淀积 | 靶材组分可以直接转移到薄膜上,可产良率的化学计量,可以避免CuSe二元相 | 不适合大面积应用,大面积薄膜尚未见报道 | 喷墨印刷 | 简化了工艺生产步骤,卷对卷技术兼容 | 低转换效率 |
|
Table 1. List of various growth methods used for the preparation of CIGS films, and their advantages and disadvantages
NaF PDT /min | KF PDT /min | GGI | CGI | Eff./(%) | Voc/ mV | Jsc (mA/cm2) | FF/(%) |
---|
0 | 0 | 0.34 | 0.79 | 12.0 | 541 | 34.9 | 63.6 | 20 | 0 | 0.35 | 0.82 | 13.2 | 624 | 34.5 | 61.5 | 20 | 5 | 0.35 | 0.79 | 17.5 | 673 | 34.7 | 74.9 | 20 | 20 | 0.36 | 0.80 | 18.5 | 695 | 35.0 | 76.0 |
|
Table 2. The influence of different alkali metal combinations on the photovoltaic parameters of CIGS solar cells
缓冲层 | 沉积方法 | 窗口层 | Eff. /(%) | Voc /V | Jsc / (mA/cm-2) | FF/(%) | Area /cm2 | 研发机构 | 参考文献 |
---|
Zn(O,S,OH)x/Zn0.8Mg0.2O | CBD/ALD | ZnO:B | 23.35 | 0.734 | 39.6 | 80.4 | 1 | SF | [18] | CdS | CBD | i-ZnO/ZnO:B | 22.9 | 0.744 | 38.77 | 79.5 | 1.041 | SF | [44] | Zn(O,S,OH) | CBD | (Zn,Mg)O/ZnO:B | 22.8 | 0.711 | 41.4 | 77.5 | 900 | SF | [54] | CdS | CBD | i-ZnO/ZnO:Al | 22.6 | 0.741 | 37.8 | 80.6 | 0.25 | ZSW | [47] | CdS | CBD | i-ZnO/ZnO:Al | 21.7 | 0.746 | 36.6 | 9.3 | 0.5 | ZSW | [55] | Zn(O,S) | CBD | Zn0.75Mg0.25O/ZnO:Al | 21.0 | 0.717 | 37.2 | 78.6 | 0.5 | Solibro | [56] | Zn(O,S) | ALD | i-ZnO/ZnO:B | 19.8 | 0.715 | 36.5 | 75.8 | 0.522 | SF | [57] | Zn(O,S) | Sputtering | ZnO:Al | 18.3 | 0.654 | 38.4 | 72.8 | 0.49 | ZSW | [58] | InxSy | Evaporation | i-ZnO/ZnO:Al | 18.2 | 0.673 | 36.3 | 74.5 | 0.5 | ZSW | [59] | Zn1-xSnxOy | ALD | i-ZnO/ZnO:Al | 18.2 | 0.689 | 35.1 | 75.3 | 0.49 | Uppsala | [60] | Zn1-xMgxO | ALD | i-ZnO/ZnO:Al | 18.1 | 0.668 | 35.7 | 75.7 | 0.5 | Uppsala | [61] | ZnS(O,OH) | CBD | i-ZnO/ZnO:B | 17.9 | 0.66 | 38.1 | 71.1 | 900 | Sams | [62] | Zn1-xMgxO | ALD | i-ZnO/In2O3:Sn | 15.5 | 0.92 | 23.4 | 72.2 | 0.433 | SF | [63] |
|
Table 3. Summary of best performing small-area CIGS cells with different buffer layers and respective deposition methods