• Journal of Semiconductors
  • Vol. 44, Issue 4, 044101 (2023)
Chaowei Si1、*, Yingchun Fu2、3, Guowei Han1, Yongmei Zhao1、4, Jin Ning1、4, Zhenyu Wei1、4, and Fuhua Yang1、4
Author Affiliations
  • 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Beijing Smart-chip Microelectronics Technology Co., Ltd, Beijing 100083, China
  • 3Zhongguancun Xinhaizeyou Technology Co., Ltd, Beijing 100049, China
  • 4Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.1088/1674-4926/44/4/044101 Cite this Article
    Chaowei Si, Yingchun Fu, Guowei Han, Yongmei Zhao, Jin Ning, Zhenyu Wei, Fuhua Yang. A new DRIE cut-off material in SOG MEMS process[J]. Journal of Semiconductors, 2023, 44(4): 044101 Copy Citation Text show less
    (Color online) DRIE process. (a) Foot effect on SOI. (b) DRIE on SOG.
    Fig. 1. (Color online) DRIE process. (a) Foot effect on SOI. (b) DRIE on SOG.
    (Color online) The preparation of structures. (a) Etching with glue mask drilling. (b) ITO sputtering. (c) Lift off. (d) Anodic bonding. (e) DRIE. (f) Release.
    Fig. 2. (Color online) The preparation of structures. (a) Etching with glue mask drilling. (b) ITO sputtering. (c) Lift off. (d) Anodic bonding. (e) DRIE. (f) Release.
    (Color online) The process of glass cover plate with filled vias. (a) Laser drilling. (b) Electroplating. (c) Active area etching.
    Fig. 3. (Color online) The process of glass cover plate with filled vias. (a) Laser drilling. (b) Electroplating. (c) Active area etching.
    (Color online) Package with anodic bonding.
    Fig. 4. (Color online) Package with anodic bonding.
    (Color online) The etched silicon wafer on Glass
    Fig. 5. (Color online) The etched silicon wafer on Glass
    (Color online) The etched structures. (a) ITO cut-off film. (b) The released and packaged structures.
    Fig. 6. (Color online) The etched structures. (a) ITO cut-off film. (b) The released and packaged structures.
    SEM results of the comb beams in SOG process.
    Fig. 7. SEM results of the comb beams in SOG process.
    SEM results of the comb beams in SOI processs.
    Fig. 8. SEM results of the comb beams in SOI processs.
    The frequency domain response of a prepared accelerometer.
    Fig. 9. The frequency domain response of a prepared accelerometer.
    Chaowei Si, Yingchun Fu, Guowei Han, Yongmei Zhao, Jin Ning, Zhenyu Wei, Fuhua Yang. A new DRIE cut-off material in SOG MEMS process[J]. Journal of Semiconductors, 2023, 44(4): 044101
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