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Acta Physica Sinica
Vol. 68, Issue 22, 228501-1 (2019)

Effects of material structure on device efficiency of III-nitride intersubband photodetectors

Jian-Bin Kang^1、2、*, Qian Li^1、2, and Mo Li^1、2

Author Affiliations

¹Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China

²Insititute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China

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DOI: 10.7498/aps.68.20190722 Cite this Article

Jian-Bin Kang, Qian Li, Mo Li. Effects of material structure on device efficiency of III-nitride intersubband photodetectors[J]. Acta Physica Sinica, 2019, 68(22): 228501-1 Copy Citation Text

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References

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Jian-Bin Kang, Qian Li, Mo Li. Effects of material structure on device efficiency of III-nitride intersubband photodetectors[J]. Acta Physica Sinica, 2019, 68(22): 228501-1

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