Researching | Effect of the Thickness of the aSi Bonding Layer at InGaAsSi Bonded Interface on the Perfmance of InGaAsSi Avalanche Photodiode

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Acta Photonica Sinica
Vol. 51, Issue 2, 0251218 (2022)

Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode

Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, and Shaoying KE^*

Author Affiliations

College of Physics and Information Engineering，Minnan Normal University，Zhangzhou，Fujian 363000，China

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DOI: 10.3788/gzxb20225102.0251218 Cite this Article

Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, Shaoying KE. Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode[J]. Acta Photonica Sinica, 2022, 51(2): 0251218 Copy Citation Text

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References

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Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, Shaoying KE. Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode[J]. Acta Photonica Sinica, 2022, 51(2): 0251218

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