• Acta Photonica Sinica
  • Vol. 51, Issue 2, 0251218 (2022)
Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, and Shaoying KE*
Author Affiliations
  • College of Physics and Information Engineering,Minnan Normal University,Zhangzhou,Fujian 363000,China
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    DOI: 10.3788/gzxb20225102.0251218 Cite this Article
    Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, Shaoying KE. Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode[J]. Acta Photonica Sinica, 2022, 51(2): 0251218 Copy Citation Text show less
    Device structure of bonded InGaAs/Si APD
    Fig. 1. Device structure of bonded InGaAs/Si APD
    I-V curves of the APDs as a function of da
    Fig. 2. I-V curves of the APDs as a function of da
    Recombination rate of the APD as a function of da
    Fig. 3. Recombination rate of the APD as a function of da
    Carrier concentration and charge concentration as a function of da
    Fig. 4. Carrier concentration and charge concentration as a function of da
    Energy band of the APD as a function of da
    Fig. 5. Energy band of the APD as a function of da
    Hole tunneling rate at bonded interface,impact ionization rate,and electrical field as a function of da
    Fig. 6. Hole tunneling rate at bonded interface,impact ionization rate,and electrical field as a function of da
    Gain,3dB bandwidth,and carrier velocity as a function of da
    Fig. 7. Gain,3dB bandwidth,and carrier velocity as a function of da
    Parameters of electrons and holesi-InGaAsa-Sic-Si
    Thickness/nm8000.5~1.81 000
    Permittivity13.911.911.8
    Electron affinity/eV4.54.174.17
    Electron,hole lifetime/s1.00×10-8/1.00×10-81.00×10-9/1.00×10-91.00×10-7/1.00×10-7
    Band gap/eV0.751.721.08
    Effective conduction band density/cm-31.52×10172.50×10202.80×1019
    Effective valence band density/cm-38.12×10182.50×10201.04×1019
    Electron,hole mobility/(cm2·V-1·s-114 200/40020/1.51 350/495
    an1an22.27×106/2.27×1067.03×105/7.03×1057.03×105/7.03×105
    ap1 ap23.95×106/3.95×1066.71×105/1.58×1066.71×105/1.58×106
    bn1bn21.13×106/1.13×1061.23×106/1.23×1061.23×106/1.23×106
    bp1 bp21.45×106/1.45×1061.69×106/2.04×1061.69×106/2.04×106
    betan/betap1/11/11/1
    Egran-14×1054×105
    Band tail density of states/(cm-3·eV-12.00×1021
    Characteristic energy(eV)for donors,acceptors0.06/0.03
    Capture cross-section for donor states,electron and hole /cm21.00×1015/1.00×1017
    Capture cross-section for acceptor states,electron and hole/cm21.00×1017/1.00×1015
    Gaussian density of states /cm-31.00×1018
    Gaussian peak energy(eV)donors,acceptors1.22/0.7
    Standard deviation /eV0.23
    Capture cross section for donor states,electron and hole/cm21.00×1014/1.00×1015
    Capture cross-section for acceptor states,electron and hole/cm21.00×1015/1.00×1014
    Table 1. Material parameters of InGaAs/Si APD
    Shixian SHE, Ye ZHANG, Zhiwei HUANG, Jinrong ZHOU, Shaoying KE. Effect of the Thickness of the a-Si Bonding Layer at InGaAs/Si Bonded Interface on the Performance of InGaAs/Si Avalanche Photodiode[J]. Acta Photonica Sinica, 2022, 51(2): 0251218
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