• Chinese Journal of Quantum Electronics
  • Vol. 25, Issue 3, 346 (2008)
Xiang-dong LUO*
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article
    LUO Xiang-dong. Fractal surface of TiN thin films sputtered at different N2 flow ratios[J]. Chinese Journal of Quantum Electronics, 2008, 25(3): 346 Copy Citation Text show less

    Abstract

    300 nm-thick TiN thin films were deposited by reactive magnetron sputtering under different N2flow ratios. Film surface morphologies were observed by atomic force microscope(AFM)and analyzed by fractal theory. The correlation between sputtering model and fractal dimension D? was investigated. With the increase of N2 flow ratio,the sputtering model of TiN film changes from metal model to transition model and to nitride model. Accordingly,D? undergoes the decrease followed by slight increase.
    LUO Xiang-dong. Fractal surface of TiN thin films sputtered at different N2 flow ratios[J]. Chinese Journal of Quantum Electronics, 2008, 25(3): 346
    Download Citation