Passive Q-switching of diode-pumped Nd:GdVO4 laser with GaAs

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 22 >Issue 4 >Page 542 > Article

Chinese Journal of Quantum Electronics
Vol. 22, Issue 4, 542 (2005)

Passive Q-switching of diode-pumped Nd:GdVO4 laser with GaAs

[in Chinese], [in Chinese]^*, and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. Passive Q-switching of diode-pumped Nd:GdVO4 laser with GaAs[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 542 Copy Citation Text

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Abstract

We report the operation of a passively Q-switched diode-pumped Nd:GdVO4 laser, using GaAs as saturable absorber in a very simple compact plane-concave cavity. With 8 W incident pump power, passively Q-switched laser was obtained with an average power of 0.98 W. The shortest pulse width of 60 ns and the highest repetition rate of 240 kHz are realized.

Keywords

diode-pumping GaAs laser techniques Nd:GdVO4 passive Q-switch

[in Chinese], [in Chinese], [in Chinese]. Passive Q-switching of diode-pumped Nd:GdVO4 laser with GaAs[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 542

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