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Journals >Infrared and Laser Engineering >Volume 50 >Issue 1 >Page 20211017 > Article

Infrared and Laser Engineering
Vol. 50, Issue 1, 20211017 (2021)

Research progress of two-dimensional semiconductor infrared photodetector (Invited)

Hangyu Xu^1,2, Peng Wang¹, Xiaoshuang Chen¹, and Weida Hu¹

Author Affiliations

¹National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

²University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/IRLA20211017 Cite this Article

Hangyu Xu, Peng Wang, Xiaoshuang Chen, Weida Hu. Research progress of two-dimensional semiconductor infrared photodetector (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211017 Copy Citation Text

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References

[9] B Radisavljevic, A Radenovic, J Brivio, et al. Single-layer MoS₂ transistors. Nature Nanotechnology, 6, 147-50(2011).

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Hangyu Xu, Peng Wang, Xiaoshuang Chen, Weida Hu. Research progress of two-dimensional semiconductor infrared photodetector (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211017

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