Research progress of two-dimensional semiconductor infrared photodetector (Invited)

Hangyu Xu; Peng Wang; Xiaoshuang Chen; Weida Hu

doi:10.3788/IRLA20211017

Journals >Infrared and Laser Engineering >Volume 50 >Issue 1 >Page 20211017 > Article

Infrared and Laser Engineering
Vol. 50, Issue 1, 20211017 (2021)

Research progress of two-dimensional semiconductor infrared photodetector (Invited)

Hangyu Xu^1、2, Peng Wang¹, Xiaoshuang Chen¹, and Weida Hu¹

Author Affiliations

¹National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

²University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/IRLA20211017 Cite this Article

Hangyu Xu, Peng Wang, Xiaoshuang Chen, Weida Hu. Research progress of two-dimensional semiconductor infrared photodetector (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211017 Copy Citation Text

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Materials	Wavelength/nm	R/A·W⁻¹	D* /Jones	QE	Time（Rise/down）	Bias/V	Other	Ref.
MoS2/PVDF	500-1550							[17]
ZnO/PVDF								[18]
b-AsP	2400-8050			6.1%		0		[19]
b-AsP/MoS2				11.36%		0		[19]
WSe2	500-1000			20%		0		[21]
AsP/MoS2				71%		0		[23]
MoS2	300-800						24% (Absorption)	[24]
GaSe/GaSb	400-1 800			50%		0	Dual-band detection	[25]
Te	520-3000	354					Polarization imaging	[26]
WSe2（CVD）	500-900	3.5×105	1×1014		23 ms	2		[27]
WSe2/SnS2	400-900	244	1.29×1013		13 ms/24 ms	−1		[28]
MoS2/b-p	532-1550	22.3	3.1×1011		15 μs/70 μs	3		[29]
MoS2/Graphene/WSe2	400-2400	1×104	1×1015		53.6 μs/30.3 μs	1		[30]

Table 1. [in Chinese]

Hangyu Xu, Peng Wang, Xiaoshuang Chen, Weida Hu. Research progress of two-dimensional semiconductor infrared photodetector (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211017

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