• Journal of Semiconductors
  • Vol. 42, Issue 3, 032401 (2021)
Liqiong Yang1,2, Linfeng Wang3, Junhua Xiao1,2, Longbing Zhang1,2, and Jian Wang1,2
Author Affiliations
  • 1State Key Laboratory of Computer Architecture, Institute of Computing Technology, Chinese Academy of Sciences, Beijing 100190, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Loongson Technology Corporation Limited, Beijing 100095, China
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    DOI: 10.1088/1674-4926/42/3/032401 Cite this Article
    Liqiong Yang, Linfeng Wang, Junhua Xiao, Longbing Zhang, Jian Wang. A 1.2 V, 3.1% 3σ-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process[J]. Journal of Semiconductors, 2021, 42(3): 032401 Copy Citation Text show less
    References

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    [2] U Sönmez, F Sebastiano, K A A Makinwa. 1650 μm2 thermal-diffusivity sensor with inaccuracies down to ±0.75 °C in 40nm CMOS. IEEE International Solid-State Circuits Conference, 206(2016).

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    [10] U Kamath, E Cullen, T Yu et al. A 1-V bandgap reference in 7-nm FinFET with a programmable temperature coefficient and inaccuracy of ±0.2% from –45 °C to 125 °C. IEEE J Solid-State Circuits, 54, 1830(2019).

    [11] G C M Meijer. Thermal sensor based on transistors. Sens Actuators, 10, 103(1986).

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    [13] L X Yin, G Du, X Y Liu. Impact of ambient temperature on the self-heating effects in FinFETs. J Semicond, 39, 094011(2018).

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    Liqiong Yang, Linfeng Wang, Junhua Xiao, Longbing Zhang, Jian Wang. A 1.2 V, 3.1% 3σ-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process[J]. Journal of Semiconductors, 2021, 42(3): 032401
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