Injection Efficiency in Hot-Electron Devices Based on Monte Carlo Simulation

Zixiang Jiang; Tingting Liu; Qingxin Sun; Cheng Zhang; Tong Yu; Xiaofeng Li

doi:10.3788/LOP202158.0504001

Journals >Laser & Optoelectronics Progress >Volume 58 >Issue 5 >Page 0504001 > Article

Laser & Optoelectronics Progress
Vol. 58, Issue 5, 0504001 (2021)

Injection Efficiency in Hot-Electron Devices Based on Monte Carlo Simulation

Zixiang Jiang^1、2, Tingting Liu^1、2, Qingxin Sun^1、2, Cheng Zhang^1、2、*, Tong Yu^1、2, and Xiaofeng Li^1、2、**

Author Affiliations

¹School of Optoelectronic Science and Engineering, Soochow University, Suzhou , Jiangsu 215006, China

²Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou , Jiangsu 215006, China

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DOI: 10.3788/LOP202158.0504001 Cite this Article Set citation alerts

Zixiang Jiang, Tingting Liu, Qingxin Sun, Cheng Zhang, Tong Yu, Xiaofeng Li. Injection Efficiency in Hot-Electron Devices Based on Monte Carlo Simulation[J]. Laser & Optoelectronics Progress, 2021, 58(5): 0504001 Copy Citation Text

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