• Photonics Research
  • Vol. 7, Issue 3, 289 (2019)
Bowen Bai1, Fenghe Yang1、2, and Zhiping Zhou1、2、*
Author Affiliations
  • 1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
  • 2Peking University Shenzhen Research Institute, Shenzhen 518057, China
  • show less
    DOI: 10.1364/PRJ.7.000289 Cite this Article Set citation alerts
    Bowen Bai, Fenghe Yang, Zhiping Zhou. Demonstration of an on-chip TE-pass polarizer using a silicon hybrid plasmonic grating[J]. Photonics Research, 2019, 7(3): 289 Copy Citation Text show less
    3D schematic of the proposed TE-pass polarizer on an SOI platform.
    Fig. 1. 3D schematic of the proposed TE-pass polarizer on an SOI platform.
    (a) Real part of neff and (b) absolute value of the real part Δneff in the HPW and DW for TM and TE polarizations as a function of waveguide width W. Here, the gap between the metal strip and the Si waveguide below is g=50 nm.
    Fig. 2. (a) Real part of neff and (b) absolute value of the real part Δneff in the HPW and DW for TM and TE polarizations as a function of waveguide width W. Here, the gap between the metal strip and the Si waveguide below is g=50  nm.
    (a) Mode similarity (between the hybrid plasmonic mode in the HPW and the photonic mode in the DW) and (b) the absolute value of the real part Δneff in the HPW and DW for TM and TE polarizations as a function of insertion layer thickness g. Here, waveguide width W is 450 nm.
    Fig. 3. (a) Mode similarity (between the hybrid plasmonic mode in the HPW and the photonic mode in the DW) and (b) the absolute value of the real part Δneff in the HPW and DW for TM and TE polarizations as a function of insertion layer thickness g. Here, waveguide width W is 450 nm.
    (a) ER and (b) IL as a function of metal strip length d with period variation from 730 to 760 nm. Here, N=8, W=450 nm, and g=50 nm.
    Fig. 4. (a) ER and (b) IL as a function of metal strip length d with period variation from 730 to 760 nm. Here, N=8, W=450  nm, and g=50  nm.
    Optical energy flux density along the propagation direction from the top view when the TM or TE mode is injected. Here, W=450 nm, N=8, d=400 nm, and Λ=750 nm.
    Fig. 5. Optical energy flux density along the propagation direction from the top view when the TM or TE mode is injected. Here, W=450  nm, N=8, d=400  nm, and Λ=750  nm.
    SEM image of the fabricated TE-pass polarizer.
    Fig. 6. SEM image of the fabricated TE-pass polarizer.
    (a) Normalized measured spectrum of one polarizer. (b) Corresponding ER and IL of the device. The black lines are trend lines extracted with robust locally weighted regression.
    Fig. 7. (a) Normalized measured spectrum of one polarizer. (b) Corresponding ER and IL of the device. The black lines are trend lines extracted with robust locally weighted regression.
    Reference No.Device Length (μm)ER (dB)IL (dB)
    [12]9270.5
    [13]60350.4
    [15]29.429.81.04
    [19]316.52.2
    [22]30310.04
    [25]30262.4
    [30]3.1180.76
    This work637.84.6
    Table 1. Summary of Demonstrated TE-Pass Polarizers
    Bowen Bai, Fenghe Yang, Zhiping Zhou. Demonstration of an on-chip TE-pass polarizer using a silicon hybrid plasmonic grating[J]. Photonics Research, 2019, 7(3): 289
    Download Citation