• Photonics Research
  • Vol. 7, Issue 3, 289 (2019)
Bowen Bai1, Fenghe Yang1、2, and Zhiping Zhou1、2、*
Author Affiliations
  • 1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
  • 2Peking University Shenzhen Research Institute, Shenzhen 518057, China
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    DOI: 10.1364/PRJ.7.000289 Cite this Article Set citation alerts
    Bowen Bai, Fenghe Yang, Zhiping Zhou. Demonstration of an on-chip TE-pass polarizer using a silicon hybrid plasmonic grating[J]. Photonics Research, 2019, 7(3): 289 Copy Citation Text show less

    Abstract

    An on-chip, high extinction ratio transverse electric (TE)-pass polarizer using a silicon hybrid plasmonic grating is proposed and experimentally demonstrated. Utilizing plasmonics to manipulate the effective index and mode distribution, the transverse magnetic mode is reflected and absorbed, while the TE mode passes through with relatively low propagation loss. For a 6-μm-long device, the measurement result shows that the extinction ratio in the wavelength range of 1.52 to 1.58 μm varies from 24 to 33.7 dB and the insertion loss is 2.8–4.9 dB. Moreover, the structure exhibits large alignment tolerance and is compatible with silicon-on-insulator fabrication technology.
    ER=10×log10(PTE/PTM),IL=10×log10(PTE),(1)

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    Bowen Bai, Fenghe Yang, Zhiping Zhou. Demonstration of an on-chip TE-pass polarizer using a silicon hybrid plasmonic grating[J]. Photonics Research, 2019, 7(3): 289
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