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    Journals >Journal of Semiconductors >Volume 40 >Issue 6 >Page 060401 > Article
    • Journal of Semiconductors
    • Vol. 40, Issue 6, 060401 (2019)
    Heteroepitaxy of semiconductor thin films
    Yi Gu1、2
    Author Affiliations
  • 1State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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    DOI: 10.1088/1674-4926/40/6/060401 Cite this Article
    Yi Gu. Heteroepitaxy of semiconductor thin films[J]. Journal of Semiconductors, 2019, 40(6): 060401 Copy Citation Text show less
    (Color online) (a) Schematic atomic geometry and (b) schematic epitaxial structure of GaAs thin film on graphene-coated Si substrate[3].
    Fig. 1. (Color online) (a) Schematic atomic geometry and (b) schematic epitaxial structure of GaAs thin film on graphene-coated Si substrate[3].
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    Yi Gu. Heteroepitaxy of semiconductor thin films[J]. Journal of Semiconductors, 2019, 40(6): 060401
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