Fig. 1. [in Chinese]

Fig. 1. (a) and (b) Schematic diagrams of the planar and vertical MSMs, respectively; (c) Intrinsic and extrinsic light excitation processes of semiconductor materials; (d) The diagram illustrating the principle of Schottky MSM-PDs at V_FB < V < V_B; (e) The diagram illustrating the principle of hot carrier Schottky MSM-PDs with the hot electrons and the corresponding current produced due to the absorption of light by the left metal film left metal film

Fig. 2. (a-e) Energy band and (f-j) electric field distribution diagrams of a typical MSM structure. (a) (f) without applied voltage; (b)(g) V is lower than V_RT; (c)(h) V is equal to V_RT; (d)(i) V is equal to V_FB; (e)(j) V is greater than V_FB but smaller than V_B

Fig. 3. (a) Experimental and calculated impulse response of a GaAs MSM-PD^[52]; (b) Impulse response of a GaAs MSM-PD with both finger spacing and width of 300 nm^[53]; (c) Schematic diagram of a resonant cavity enhanced GaAs MSM-PD^[54]; (d) Schematic diagram of GaAs MSM-PD with recessed anode and cathode^[18]; (e) Schematic diagram of the plasmonic MSM-PD structure^[55]; (f) Structure diagram of a GaAs MSM-PD based on 2D electron gas and 2D hole gas^[56]

Fig. 4. Schematic diagram of a back-illuminated InGaAs MSM-PD (a) and its photo response and dark current characteristics (b)^[70]; Schematic diagram of an InGaAs MSM-PD with semi-transparent Schottky contacts (c) and curves of responsivity versus optical power for the devices with different contact thicknesses^[71]. The structural diagram of the BCB passivated InGaAs MSM-PD (e) and the I–V characteristics in dark and under illumination for devices before and after passivation (f)^[76]

Fig. 5. (a) Cross-sectional diagram of an MSM detector based on a textured silicon membrane^[79]; (b) Schematic diagram of an MSM-PD based on silicon trenches^[80]; (c) Photo response and dark currents measured for both symmetric and asymmetric MSM-PDs on Ge substrate^[81]; (d) SEM image of an asymmetric contact for a Si MSM PD^[82]

Fig. 6. (a)~(b) Schematic diagram of structure, electric field distribution and energy band of the MoS₂ MSM-PD with one of the finger electrode including an optical antenna array^[112]; (c) Schematic diagram of the vertical type ZnO MSM-PD with the conformal grating structure^[26]; (d) Schematic of structure and principle of Au/TiO₂/ITO photodetector with two dimensional conformal grating^[115]; (e) Schematic diagram of the MoS₂ MSM-PD dressed with metallic nanoparticles^[116]; (f) Schematic diagram of the Tamm plasmon based hot electron ZnO MSM-PD^[119]; (g) Structural diagram of broadband and efficient photodetectors composed of multiple MSMs based on the slow light absorption principle^[121]