• Journal of Semiconductors
  • Vol. 43, Issue 3, 030201 (2022)
Yi Hu1,2, Junchuan Liang1,2, Lixiu Zhang3, Zhong Jin1,2, and Liming Ding3
Author Affiliations
  • 1Key Laboratory of Mesoscopic Chemistry (MOE), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
  • 2Shenzhen Research Institute of Nanjing University, Shenzhen 518063, China
  • 3Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China
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    DOI: 10.1088/1674-4926/43/3/030201 Cite this Article
    Yi Hu, Junchuan Liang, Lixiu Zhang, Zhong Jin, Liming Ding. 2D arsenenes[J]. Journal of Semiconductors, 2022, 43(3): 030201 Copy Citation Text show less
    (Color online) Crystal structures, Brillouin zones, phonon spectra and electrical band structures of (a) puckered and (b) buckled arsenenes. Reproduced with permission[6], Copyright 2015, American Physical Society. (c) Electrical band structures of buckled arsenene with different layer numbers. Reproduced with permission[7], Copyright 2015, Wiley-VCH. (d) Schematic illustration for double-gated MOSFET of arsenene. Reproduced with permission[9], Copyright 2016, Springer Nature.
    Fig. 1. (Color online) Crystal structures, Brillouin zones, phonon spectra and electrical band structures of (a) puckered and (b) buckled arsenenes. Reproduced with permission[6], Copyright 2015, American Physical Society. (c) Electrical band structures of buckled arsenene with different layer numbers. Reproduced with permission[7], Copyright 2015, Wiley-VCH. (d) Schematic illustration for double-gated MOSFET of arsenene. Reproduced with permission[9], Copyright 2016, Springer Nature.
    (Color online) (a) Cross-sectional image of arsenene grown on InAs substrate. Reproduced with permission[12], Copyright 2016, American Physical Society. (b) AFM image of black arsenene exfoliated from natural minerals. Reproduced with permission[13], Copyright 2018, Wiley-VCH. (c) Transfer characteristic of a monolayer black arsenene device. Reproduced with permission[14], Copyright 2018, Wiley-VCH. (d) Schematic illustration for liquid-phase exfoliation of arsenene from bulk gray arsenic crystals. Reproduced with permission[15], Copyright 2016, Royal Society of Chemistry. (e) Schematic illustration for growth of gray arsenene nanoflakes on mica. Reproduced with permission[17], Copyright 2019, American Chemical Society.
    Fig. 2. (Color online) (a) Cross-sectional image of arsenene grown on InAs substrate. Reproduced with permission[12], Copyright 2016, American Physical Society. (b) AFM image of black arsenene exfoliated from natural minerals. Reproduced with permission[13], Copyright 2018, Wiley-VCH. (c) Transfer characteristic of a monolayer black arsenene device. Reproduced with permission[14], Copyright 2018, Wiley-VCH. (d) Schematic illustration for liquid-phase exfoliation of arsenene from bulk gray arsenic crystals. Reproduced with permission[15], Copyright 2016, Royal Society of Chemistry. (e) Schematic illustration for growth of gray arsenene nanoflakes on mica. Reproduced with permission[17], Copyright 2019, American Chemical Society.