• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 4, 534 (2005)
[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, and [in Chinese]3
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Analysis of double-frequency crystal length on output power in LD side-pumped Nd3+:YAG/KTP 660 nm laser[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 534 Copy Citation Text show less

    Abstract

    Utilizing four-level rate equation and double-frequency theory of analogous-Gauss beam, laser output power on the KTP length is calculated for LD array side-pumped 660 nm red laser. The optimal parameters are given. Theoretical analysis agrees quite well with the experimental results. With different length of KTP crystal, 3.75 W red laser power is obtained at 180 W pumping power. Using the appropriate length 5.83 W red laser is obtained at 210 W pumping power.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Analysis of double-frequency crystal length on output power in LD side-pumped Nd3+:YAG/KTP 660 nm laser[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 534
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