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    Journals >Acta Physica Sinica >Volume 69 >Issue 5 >Page 057101-1 > Article
    • Acta Physica Sinica
    • Vol. 69, Issue 5, 057101-1 (2020)
    A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor
    Meng Zhang, Ruo-He Yao*, and Yu-Rong Liu
    Author Affiliations
  • School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China
    • show less
    DOI: 10.7498/aps.69.20191512 Cite this Article
    Meng Zhang, Ruo-He Yao, Yu-Rong Liu. A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(5): 057101-1 Copy Citation Text show less
    References

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    Meng Zhang, Ruo-He Yao, Yu-Rong Liu. A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(5): 057101-1
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