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- Journal of Semiconductors
- Vol. 44, Issue 7, 072802 (2023)
References

Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. Journal of Semiconductors, 2023, 44(7): 072802
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