• Journal of Semiconductors
  • Vol. 44, Issue 7, 072802 (2023)
Tingting Han1,†, Yuangang Wang1,†, Yuanjie Lv*, Shaobo Dun*..., Hongyu Liu*, Aimin Bu* and Zhihong Feng**|Show fewer author(s)
Author Affiliations
  • National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
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    DOI: 10.1088/1674-4926/44/7/072802 Cite this Article
    Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. Journal of Semiconductors, 2023, 44(7): 072802 Copy Citation Text show less
    References

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    [4] R Saurav, B Arkka, R Praneeth et al. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm2. IEEE Electron Device Lett, 42, 1140(2021).

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    [10] S Sharma, K Zeng, S Saha et al. Field-plated lateral Ga2O3 MOSFETs with polymer passivation and 8.03 kV breakdown voltage. IEEE Electron Device Lett, 41, 836(2020).

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    [13] K Yoshihiro, K Shohei, N Shinji. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3. Appl Phys Express, 9, 091101(2016).

    [14] H H Gong, X H Chen, Y Xu et al. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode. Appl Phys Lett, 117, 022104(2020).

    [15] X Lu, X D Zhou, H X Jiang et al. 1-kV sputtered p-NiO/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below 1 μA/cm2. IEEE Electron Device Lett, 41, 449(2020).

    [16] H H Gong, F Zhou, W Z Xu et al. 1.37 kV/12 A NiO/β-Ga2O3 heterojunction diode with nanosecond reverse recovery and rugged surge-current capability. IEEE Trans Power Eletron, 36, 12213(2021).

    [17] H H Gong, Z P Wang, X X Yu et al. Field-plated NiO/Ga2O3 p-n heterojunction power diodes with high-temperature thermal stability and near unity ideality factors. Electron Device Soc, 9, 1166(2021).

    [18] F Zhou, H H Gong, W Z Xu et al. 1.95-kV Beveled-mesa NiO/β-Ga2O3 heterojunction diode with 98.5% conversion efficiency and over million-times overvoltage ruggedness. IEEE Trans Power Eletronics, 37, 1223(2022).

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    [20] Y G Wang, H H Gong, Y J Lv et al. 2.41 kV vertical p-NiO/n-Ga2O3 heterojunction diodes with a record Baliga’s figure-of-merit of 5.18 GW/cm2. IEEE Trans Power Eletronics, 37, 3743(2022).

    [21] J C Zhang, P F Dong, K Dang et al. Ultra-wide bandgap semiconductor Ga2O3 power diodes. Nat Commun, 13, 3900(2022).

    [22] Q L Yan, H H Gong, J C Zhang et al. β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2. Appl Phys Lett, 118, 122102(2021).

    [23] H H Gong, X X Yu, Y Xu et al. β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings. Appl Phys Lett, 118, 202102(2021).

    [24] Y J Lv, Y G Wang, X C Fu et al. Demonstration of β-Ga2O3 junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm2 or a 5A/700 V handling capabilities. IEEE Trans Power Eletronics, 36, 6179(2021).

    Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. Journal of Semiconductors, 2023, 44(7): 072802
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