• Journal of Semiconductors
  • Vol. 44, Issue 7, 072802 (2023)
Tingting Han1,†, Yuangang Wang1,†, Yuanjie Lv*, Shaobo Dun*..., Hongyu Liu*, Aimin Bu* and Zhihong Feng**|Show fewer author(s)
Author Affiliations
  • National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
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    DOI: 10.1088/1674-4926/44/7/072802 Cite this Article
    Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. Journal of Semiconductors, 2023, 44(7): 072802 Copy Citation Text show less
    (Color online) Cross-sectional schematic of the devices with DL-JTE/ JTE.
    Fig. 1. (Color online) Cross-sectional schematic of the devices with DL-JTE/ JTE.
    (Color online) C–V and 1/C2–V characteristics of the Ga2O3 SBD without termination.
    Fig. 2. (Color online) CV and 1/C2V characteristics of the Ga2O3 SBD without termination.
    (Color online) Forward I–V curves and Ron,sp of devices with DL-JTE/ JTE.
    Fig. 3. (Color online) Forward IV curves and Ron,sp of devices with DL-JTE/ JTE.
    (Color online) Breakdown characteristics of devices with DL-JTE/ JTE.
    Fig. 4. (Color online) Breakdown characteristics of devices with DL-JTE/ JTE.
    (Color online) Simulated distributions of the electric field for the fabricated HJD with (a) JTE, (b) DL-JTE at bias of –2020 V, (c) DL-JTE at bias of –2830 V, and (d–f) the corresponding distribution of electric field versus position.
    Fig. 5. (Color online) Simulated distributions of the electric field for the fabricated HJD with (a) JTE, (b) DL-JTE at bias of –2020 V, (c) DL-JTE at bias of –2830 V, and (d–f) the corresponding distribution of electric field versus position.
    (Color online) Vbr versus Ron,sp of β-Ga2O3-based diodes reported against our NiO/β-Ga2O3 HJD with DL-JTE.
    Fig. 6. (Color online) Vbr versus Ron,sp of β-Ga2O3-based diodes reported against our NiO/β-Ga2O3 HJD with DL-JTE.
    Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. Journal of Semiconductors, 2023, 44(7): 072802
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