Fig. 1. (Color online) (a) Schematic diagram and (b) diode model of the perovskite/Si tandem solar cell. Note that a well-fabricated intermediate junction is considered as a resistor; alternatively, an improperly prepared intermediate junction is considered as a Schottky junction.

Fig. 2. (Color online) (a) Illuminated J-V curves, (b) dark J-V curves of the 24% Si solar cell, 19% PVS solar cell, and 28.5% PVS/Si tandem solar cell, which parameters listed in Table 1 are extracted from the reported Si and perovskite solar cells. (c) Semi-log dark J-V curves and (d) m-V curves of the 28.5% PVS/Si tandem solar cell and the individual branches from the diode models.

Fig. 3. (Color online) Illuminated J-V curves of the PVS/Si tandem cells whose efficiency loss is originated from the different Si subcell’s V_oc-loss mechanisms, i.e., (a) I_{01_Si} and (b) I_{02_Si}, respectively. Effects of I_{01_Si} and I_{02_Si} on (c) the efficiency, (d) the V_oc, (e) the FF, (f) the semi-log dark I-V curves, and (g) the m-V curves of the tandem cells.

Fig. 4. (Color online) Illuminated J-V curves of the PVS/Si tandem cells with different shunt resistances originated from (a) the full cell, (b) the Si subcell, or (c) the PVS subcell. The shunt resistance values are set as 100000, 5000, 1000, 500, and 100 Ω^.cm², representing different degrees of leakage. The semi-log dark J-V curve comparison (d) and m-V curve comparison (e) of the three cells with shunt resistances of 1000 and 100 Ω^.cm².

Fig. 5. (Color online) (a) Schematic diagrams of the Ohmic-contact intermediate junction. Effects of the intermediate junction with different resistances on (b) the illuminated J-V curves, (c) the V_oc and FF, (d) the semi-log dark J-V curves, and (e) the m-V curves.

Fig. 6. (Color online) (a) Schematic diagrams of the Schottky-contact intermediate junction. Effects of the intermediate junction with different saturation current densities on (b) the illuminated J-V curves, (c) the V_oc and FF, (d) the semi-log dark J-V curves, and (e) the m-V curves.

Table 0. The setting I_{01_Si} and I_{02_Si} values of the Si subcells.

Table 0. Default parameters used for the tandem solar cell.