Studies on Gain Characteristics of Erbium-doped Optical Waveduide Amplifiers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 19 >Issue 2 >Page 166 > Article

Chinese Journal of Quantum Electronics
Vol. 19, Issue 2, 166 (2002)

Studies on Gain Characteristics of Erbium-doped Optical Waveduide Amplifiers

[in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, and [in Chinese]^1、3

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on Gain Characteristics of Erbium-doped Optical Waveduide Amplifiers[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 166 Copy Citation Text

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Abstract

Erbium-doped waveguide amplifiers(EDWA's) pumped at 980nm wavelength are stud- ied using overlapping factors methods in this paper. An analytical implicit gain solution is de- rived, and based on it an analytical threshold expression of pump power is obtained also. Finally, effects of erbium-doped concentration and pump power on the gain of ED WA's are discussed in detail

Keywords

erbium-doped waveguide Gain integrated optics optical amplifiers overlapping factors

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on Gain Characteristics of Erbium-doped Optical Waveduide Amplifiers[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 166

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