A Novel Silicon Carbide DSRD with Variable Doping in Base Region

QIAO Bin; CHEN Wanjun; GAO Wuhao; XIA Yun; ZHANG Kenan; SUN Ruize

doi:10.13911/j.cnki.1004-3365.200043

[1] GREKHOV I V, MESYATS G A. Physical basis for high-power semiconductor nanosecond opening switches ［J］. IEEE Trans Plasma Sci, 2000, 28(5): 1540-1544.

[2] KESAR A S. A compact, 10-kV, 2-ns risetime pulsed-power circuit based on off-the-shelf components ［J］. IEEE Trans Plasma Sci, 2018, 46(3): 594-597.

[3] ARISTOV Y V, VORONKOV V B, GREKHOV I V, et al. Semiconductor formers of high-voltage pulses of nanosecond duration ［J］. Instrum Exp Tech, 2007, 50(3): 350-352.

[5] GREKHOV I V, IVANOV P A, KHRISTYUK D V, et al. Sub-nanosecond semiconductor opening switches based on 4H-SiC p+p0n+-diodes ［J］. Sol Sta Elec, 2003, 47(10): 1769-1774.

[6] AFANASYEV A V, IVANOV B V, ILYIN V A, et al. Superfast drift step recovery diodes (DSRDs) and vacuum field emission diodes based on 4H-SiC ［J］. Mater Sci Forum, 2013, 740-742: 1010-1013.

[7] ILYIN V A, AFANASYEV A V, IVANOV B V, et al. High-voltage ultra-fast pulse diode stack based on 4H-SiC ［J］. Mater Sci Forum, 2016, 858: 786-789.

[8] ILYIN V A, AFANASYEV A V, DEMIN Y S, et al. 30 kV pulse diode stack based on 4H-SiC ［J］. Mater Sci Forum, 2018, 924: 841-844.

[9] IVANOV P A, KON'KOV O, SAMSONOVA T, et al. Electrical performance of 4H-SiC based drift step recovery diodes ［J］. Mater Sci Forum, 2016, 858: 761-764.

[10] AFANASYEV A V, IVANOV B V, ILYIN V A, et al. Temperature dependence of minority carrier lifetime in epitaxially grown p+-p--n+ 4H-SiC drift step recovery diodes ［J］. Mater Sci Forum, 2015, 821: 632-635.

[13] MERENSKY L M, KARDO-SYSOEV A F, SHMILOVITZ D, et al. Efficiency study of a 2.2 kV, 1 ns, 1 MHz pulsed power generator based on a drift-step-recovery diode ［J］. IEEE Trans Plasma Sci, 2013, 41(11): 3138-3142.

[15] DAS M K, SUMAKERIS J J, HULL B A, et al. Evolution of drift-free, high power 4H-SiC PiN diodes ［J］. Mater Sci Forum, 2006, 527: 1329-1334.