Contents
2021
Volume: 51 Issue 1
24 Article(s)

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[in Chinese]
Microelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 51, Issue 1, 1 (2021)
A Single-Inductor Bipolar-Output DC-DC Converter for Neural Stimulator
SUN Lei, ZHANG Yuwei, ZHANG Milin, and LI Dongmei
Microelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 51, Issue 1, 16 (2021)
A Wide Voltage-Wide Temperature Range Current Reference Circuit Based on BCD Process
SHAO Gang, LIU Minxia, and TIAN Ze
Microelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 51, Issue 1, 73 (2021)
A 12.5 Gbit/s High Speed SerDes Transmitter Based on Differential Encoding Technology
PENG Jiahao, LI Ruzhang, FU Dongbing, DING Yi, and YANG Hong
Microelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 51, Issue 1, 85 (2021)
A Novel Silicon Carbide DSRD with Variable Doping in Base Region
QIAO Bin, CHEN Wanjun, GAO Wuhao, XIA Yun, ZHANG Kenan, and SUN Ruize
Drift step recovery diodes (DSRD) are generally used in ultra-wideband pulse signal sources, which can reverse nanosecond-level high-voltage pulse to the load. However, DSRD have high requirements for the rising front edge of the output pulse. A novel wide band gap material step recovery diode with variable doping in t
Microelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 51, Issue 1, 96 (2021)
Design of an Interdigital Switchable Bandpass Filter Based on RF MEMS Switch
HAN Lulu, WU Qiannan, WANG Shanshan, FAN Lina, and LI Mengwei
Microelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 51, Issue 1, 106 (2021)
A New High Voltage SBD with Improved Buried Buffer Doped Structure
GAO Wenhao, SUN Qiming, RAN Qingyue, JIAN Peng, and CHEN Wensuo
A novel buried buffer doped layer (IBBD) high voltage SBD was presented, and its operating characteristics were analyzed theoretically and verified by simulation. Compared with the conventional high-voltage SBD, the IBBD-SBD introduced a buried buffer doping layer above the substrate to transfer the reverse breakdown p
Microelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 51, Issue 1, 116 (2021)