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    Journals >Photonics Research >Volume 10 >Issue 12 >Page 2778 > Article
    • Photonics Research
    • Vol. 10, Issue 12, 2778 (2022)
    Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes
    Li Chen1、2、†,*, Jie Sun1、†, Wei Guo1、2, Jason Hoo3, Wei Lin4, Hangyang Chen4, Houqiang Xu1、5, Long Yan3, Shiping Guo3, Junyong Kang4, and Jichun Ye1、2、6
    Author Affiliations
  • 1Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 2Yongjiang Laboratory, Ningbo 315201, China
  • 3Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China
  • 4Department of Physics, Xiamen University, Xiamen 361005, China
  • 5University of Chinese Academy of Sciences, Beijing 100049, China
  • 6e-mail:
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    DOI: 10.1364/PRJ.459897 Cite this Article Set citation alerts
    Li Chen, Jie Sun, Wei Guo, Jason Hoo, Wei Lin, Hangyang Chen, Houqiang Xu, Long Yan, Shiping Guo, Junyong Kang, Jichun Ye. Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes[J]. Photonics Research, 2022, 10(12): 2778 Copy Citation Text show less
    References

    [1] M. Kneissl, T. Seong, J. Han, H. Amano. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics, 13, 233-244(2019).

    [2] W. Lin, W. Jiang, N. Gao, D. Cai, S. Li, J. Kang. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices. Laser Photon. Rev., 7, 572-579(2013).

    [3] L. Chen, W. Lin, H. Wang, J. Li, J. Kang. Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling. Light Sci. Appl., 9, 104(2020).

    [4] L. Chen, W. Lin, H. Chen, H. Xu, C. Guo, Z. Liu, J. Yan, J. Sun, H. Liu, J. Wu, W. Guo, J. Kang, J. Ye. Annihilation and regeneration of defects in 1122 semipolar AlN via high-temperature annealing and MOVPE regrowth. Cryst. Growth Des., 21, 2911-2919(2021).

    [5] M. Jo, Y. Itokazu, S. Kuwaba, H. Hirayama. Improved crystal quality of semipolar AlN by employing a thermal annealing technique with MOVPE. J. Cryst. Growth, 507, 307-309(2019).

    [6] M. Jo, N. Morishita, N. Okada, Y. Itokazu, N. Kamata, K. Tadatomo, H. Hirayama. Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire. AIP Adv., 8, 105312(2018).

    [7] H. Miyake, C. Lin, K. Tokoro, K. Hiramatsu. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing. J. Cryst. Growth, 456, 155-159(2016).

    [8] A. Knauer, A. Mogilatenko, J. Weinrich, S. Hagedorn, S. Walde, T. Kolbe, L. Cancellara, M. Weyers. The impact of AlN templates on strain relaxation mechanisms during the MOVPE growth of UVB-LED structures. Cryst. Res. Technol., 55, 1900215(2020).

    [9] C. Kai, H. Zang, J. Ben, K. Jiang, Z. Shi, Y. Jia, X. Cao, W. Lu, X. Sun, D. Li. Origination and evolution of point defects in AlN film annealed at high temperature. J. Lumin., 235, 118032(2021).

    [10] B. Leung, Q. Sun, C. Yerino, J. Han. Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy. Semicond. Sci. Technol., 27, 024005(2012).

    [11] Q. Sun, C. Yerino, B. Leung, J. Han, M. Coltrin. Understanding and controlling heteroepitaxy with the kinetic Wulff plot: a case study with GaN. J. Appl. Phys., 110, 053517(2011).

    [12] Y. Seta, T. Akiyama, A. Pradipto, K. Nakamura, T. Ito. Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth. J. Cryst. Growth, 510, 7-12(2019).

    [13] D. Dinh, N. Hu, Y. Honda, H. Amano. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN. J. Mater. Chem. C, 8, 8668-8675(2020).

    [14] Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama. Surface stability and growth kinetics of compound semiconductors: an ab initio-based approach. Materials, 6, 3309-3360(2013).

    [15] Q. Zhuang, W. Lin, W. Yang, W. Yang, C. Huang, J. Li, H. Chen, S. Li, J. Kang. Defect suppression in AlN epilayer using hierarchical growth units. J. Phys. Chem. C, 117, 14158-14164(2013).

    [16] S. Lazarev, S. Bauer, T. Meisch, M. Bauer, I. Tischer, M. Barchuk, K. Thonke, V. Holy, F. Scholz, T. Baumbach. Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar 1122 GaN layers grown from the sidewall of an r-patterned sapphire substrate. J. Appl. Crystallogr., 46, 1425-1433(2013).

    [17] D. Dinh, M. Conroy, V. Zubialevich, N. Petkov, J. Holmes, P. Parbrook. Single phase 1122 AlN grown on 1010 sapphire by metalorganic vapour phase epitaxy. J. Cryst. Growth, 414, 94-99(2015).

    [18] J. Stellmach, F. Mehnke, M. Frentrup, C. Reich, J. Schlegel, M. Pristovsek, T. Wernicke, M. Kneissl. Structural and optical properties of semipolar 1122 AlGaN grown on 1010 sapphire by metal-organic vapor phase epitaxy. J. Cryst. Growth, 367, 42-47(2013).

    [19] U. Haboeck, H. Siegle, A. Hoffmann, C. Thomsen. Lattice dynamics in GaN and AlN probed with first- and second-order Raman spectroscopy. Phys. Status Solidi C, 1710-1731(2003).

    [20] A. Romanov, E. Young, F. Wu, A. Tyagi, C. Gallinat, S. Nakamura, S. DenBaars, J. Speck. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy. J. Appl. Phys., 109, 103522(2011).

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    Li Chen, Jie Sun, Wei Guo, Jason Hoo, Wei Lin, Hangyang Chen, Houqiang Xu, Long Yan, Shiping Guo, Junyong Kang, Jichun Ye. Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes[J]. Photonics Research, 2022, 10(12): 2778
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